Jiangsu Profile
Product List
6436. 100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b 
[Jun 23, 2025]
[Jun 23, 2025] 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS ...
6437. 600V 110A PCB High Power Barrier Plastic Screw Connection Terminal Block [Jun 30, 2022]
[Jun 30, 2022] Product Description 600V 110A pcb high power barrier plastic Screw connection terminal block Electrical Performance Rated Voltage 600V AC Rated Impulse Voltage 6000V Rated Current 50A Contact ...
6438. Screw Connection 110A 600V Pluggable PCB 5 Pins Terminal Block [Jun 30, 2022]
[Jun 30, 2022] Product Description Screw connection 110A 600V pluggable pcb 5 pins terminal block Electrical Performance Rated Voltage 600V AC Rated Impulse Voltage 6000V Rated Current 50A Contact ...
6439. 50A 600V 5 Poles Wall Panel Feed Through Terminal Block with Protection Cover [Jun 30, 2022]
[Jun 30, 2022] Product Description 50A 600V 5 poles Wall Panel Feed Through Terminal Block with protection cover Electrical Performance Rated Voltage 600V AC Rated Impulse Voltage 6000V Rated Current 50A Contact ...
6440. 5 Pins 50A Solar Inverter Wall-in High Current Terminal Block for PV Inverter [Jun 30, 2022]
[Jun 30, 2022] Product Description 5 pins 50A Solar Inverter Wall-in High Current Terminal block for PV Inverter Electrical Performance Rated Voltage 600V AC Rated Impulse Voltage 6000V Rated Current 50A Contact ...
6441. 650V IGBT Module Dgq450c65m2t [Jun 23, 2025]
[Jun 23, 2025] Hot sale IGBT MODULE FOR SOLAR INVERTER APPLICATIONS, WITH VARIOUS MODELS.
6442. High Quality High Current Capacity SCR Mtc30-160 Thyristor Power Module [Apr 18, 2025]
[Apr 18, 2025] Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...
6443. 600A 650V Half Bridge Module Dgd600h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6444. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6445. 900A 750V Half Bridge Module Dgd900h75L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6446. 300A 1200V Half Bridge Module Dgd300h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6447. 900A 1200V Half Bridge Module Dgd900h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6448. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6449. 400A 650V Half Bridge Module Dgd400h65m2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
6450. 450A 1200V Half Bridge Module Dgd450h120L2t [Jul 09, 2025]
[Jul 09, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...
