Jiangsu Profile
Product List
11086. Semiconductor Grade Tungsten Hexafluoride WF6 Gas for CVD Deposition CAS 7783-82-6 
[Oct 19, 2026]
[Oct 19, 2026] Product Description Product Description Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L ...
11087. Tungsten Hexafluoride WF6 Semiconductor Gas for CVD Tungsten Deposition [Oct 19, 2026]
[Oct 19, 2026] Product Description Product Description Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L ...
11088. Semiconductor CVD Precursor Tungsten Hexafluoride WF6 Electronic Specialty Gas [Oct 19, 2026]
[Oct 19, 2026] Product Description Product Description Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L ...
11089. WF6,Gas Semiconductor Grade Tungsten Hexafluoride for CVD Applications [Oct 19, 2026]
[Oct 19, 2026] Product Description Product Description Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L ...
11090. Electronic Grade WF6 Gas for Semiconductor Tungsten Deposition Processes [Oct 19, 2026]
[Oct 19, 2026] Product Description Product Description Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L ...
11091. Semiconductor Grade WF6 Tungsten Hexafluoride Gas for Electronic Manufacturing [Oct 19, 2026]
[Oct 19, 2026] Product Description Product Description Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula WF6. It is a toxic, corrosive, colorless gas, with a density of about 13 g/L ...
11092. Reliable Mitsubishi PM100RL1A060 Intelligent Power Module for Efficient Performance [Oct 19, 2026]
[Oct 19, 2026] Product Description Mitsubishi IGBT SCR IPM modules Feel free to contact me for any model! Storehouse Packing & Delivery Certifications Company Profile Co-brand Note: We can also find other substitute products for you. ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
11093. Mitsubishi FM400TU Intelligent Power Module for Industrial Applications [Oct 19, 2026]
[Oct 19, 2026] Product Description Mitsubishi IGBT SCR IPM modules Feel free to contact me for any model! Storehouse Packing & Delivery Certifications Company Profile Co-brand Note: We can also find other substitute products for you. ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
11094. Cold Extrusion Anti-Oxidation High Voltage Resistance Foundry Oxygen-Free Water Cooled Copper Cable [Oct 19, 2026]
[Oct 19, 2026] Product Description WATER COOLED CABLE FOR INDUCTION FURNACES The water-cooled cable (commonly known as water cable) is a specialized cable with a hollow water passage, designed for high-current induction heating ...
Company: Wuxi Jizhou Technology Co., Ltd.
11095. Compact High Temperature Resistance Pressure Transmitter [Sep 29, 2026]
[Sep 29, 2026] The HPM189 high-temperature pressure transmitter uses a high-temperature-resistant pressure sensing core as the sensitive element and transforms the pressure of the measured medium into a pressure signal using the ...
11096. High Purity Si2cl6 Hexachlorodisilane 5n Hcds Semiconductor Ald CVD Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
11097. Hexachlorodisilane 268 89 G/Mol Hcds 5n Semiconductor Grade Ald CVD Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
11098. Hexachlorodisilane Si2cl6 5n 99 999% High Purity Semiconductor Precursor Ald CVD Lpcvd [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
11099. Hcds Ald Precursor Hexachlorodisilane CAS 13465-77-5 for Semiconductor Deposition [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
11100. Hcds for Ald CVD Lpcvd High Purity 5n Hexachlorodisilane Semiconductor Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
