Jiangsu Profile
Product List
721. Goford Mosfet Gt52n10d5 100V Dfn5*6 Replacement of Aon6294 
[Jun 10, 2022]
[Jun 10, 2022] Goford Mosfet GT52N10D5 100V DFN5*6 Replacement of AON6294 General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
722. G1002 2A to-92 100V N Channel Mosfet Transistor for LED Lighting [May 27, 2022]
[May 27, 2022] G1002 2A TO-92 100V N channel Mosfet Transistor for LED Lighting General Description The G1002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
723. New Original Mosfet of 100V 5A N-Channel Sot-23-3 Package Mosfet for RGB Dimmer LED Driver [Sep 09, 2022]
[Sep 09, 2022] New Original Mosfet of 100V 5A N-Channel Sot-23-3 Package Mosfet for RGB Dimmer LED Driver General Description The G1003A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ...
Company: Wuxi Goford Semiconductor Co., Ltd.
724. 2302 20V 4.3A N-Channel Sot-23 MOS Tube Mosfet (A2SHB SI2302) for LED Driver [Aug 19, 2022]
[Aug 19, 2022] Product Description 2302 20V 4.3A N-Channel SOT-23 mos tube mosfet (A2SHB SI2302) for led driver Part Number 2302 VDSS 20V ID 4.3A RDS 20mΩ @ vgs=4.5V Vth 0.83V Package SOT-23 Ciss 300 pF Crss 80 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
725. Fdms4d0n12c Substitute Mosfet Gt52n10d5 Dfn5*6 Package 100V 48A for PV Inverter [Aug 19, 2022]
[Aug 19, 2022] FDMS4D0N12C Substitute Mosfet GT52N10D5 DFN5*6 Package 100V 48A for PV Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
726. Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter [Aug 19, 2022]
[Aug 19, 2022] Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
727. China Factory Mosfet 120A 40V N Channel to-220 Mosfet for UPS [Aug 19, 2022]
[Aug 19, 2022] China Factory MOSFET 120A 40V N Channel TO-220 MOSFET for UPS General Description The G120N04A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
728. 2301 P Channel Power Mosfets [Aug 19, 2022]
[Aug 19, 2022] Product Description Professional Mosfet 2301 -20V 3A P-Channel Sot-23 Mosfet Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
729. G2305 Fets Transistor -20V 4.8A P Channel Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description silicon wafer semiconductor G2305 20V 4.8A Mosfet Part Number G2305 VDSS -20V ID -4.8A RDS 45 mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 740 pF Crss 190 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
730. Electronic Components Gt52n10d5 100V 48A Dfn Package Mosfet [Jun 23, 2022]
[Jun 23, 2022] Electronic Components GT52N10D5 100V 48A DFN Package Mosfet General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
731. Discrete Component Si4916dy Equivalent Transistor G16n03s 30V Mosfet [Jun 14, 2022]
[Jun 14, 2022] Discrete Component Si4916DY Equivalent Transistor G16N03S 30V Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
732. RoHS Compliant P-Channel Mosfet Application 2301 in a Sot-23 Package [Mar 22, 2021]
[Mar 22, 2021] Product Description Rohs Compliant P-Channel MOSFET application 2301 in a SOT-23 package Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
733. After SGS Testing Black Conductive Stretch Packaging Film for Integrated Circuits [Jan 16, 2026]
[Jan 16, 2026] Black conductive PE film Product Description Black conductive PE film The wide customizable range is 500~2000mm, with a thickness range of 0.03~0.2mm. It can be processed into customized single-sided, ...
734. 500~2000mm Width Double Sided Black Electrical Conductivity Film for Instrumentation of Integrated ... [Jan 16, 2026]
[Jan 16, 2026] Double sided conductive film, double sided black conductive PE film Product Description Double sided conductive film, double sided black conductive PE film The wide customizable range is 500-2000mm, and the ...
735. Black and White Conductive Inner PE Stretch Plastic Conductive Polyethylene Film for ... [Jan 16, 2026]
[Jan 16, 2026] Black And White Conductive Inner Membrane Product Description Black And White Conductive Inner Membrane The wide customizable range is 500~2500mm, with a thickness range of 0.03~0.2mm. At the same time, it ...
