Jiangsu Profile
Product List
661. Professional IC Mosfet Transistor 03n06 60V 3A with Sot-23-3L Package 
[Jun 10, 2022]
[Jun 10, 2022] Professional IC Mosfet Transistor 03N06 60V 3A with SOT-23-3L Package General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
662. Mosfet Transistor 30V 50A N-Channel Parts with to-252 Package [May 27, 2022]
[May 27, 2022] Mosfet Transistor 30V 50A N-Channel Parts with TO-252 Package General Description The 50N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
663. ISO9001 Certificate Mosfet Supplier 60V 40A Dfn5X6 N Mosfet for Inverter [May 27, 2022]
[May 27, 2022] ISO9001 Certificate Mosfet Supplier 60V 40A DFN5X6 N MOSFET for Inverter General Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
664. Fast Delivert Factory 20V 8A N Channel Sot-23-3L Mosfet [May 27, 2022]
[May 27, 2022] Fast Delivert Factory 20V 8A N Channel SOT-23-3L MOSFET General Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
665. Fdn337n Alternative 3400L 30V 5.6A N Channel Sot-23 Mosfet Transistor [May 27, 2022]
[May 27, 2022] Fdn337n Alternative 3400L 30V 5.6A N Channel Sot-23 Mosfet Transistor General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
666. Mosfet Manufacturer 60V 40A Dfn5X6 Dual N Mosfet with SGS Certificate [May 27, 2022]
[May 27, 2022] MOSFET Manufacturer 60V 40A DFN5X6 Dual N MOSFET with SGS Certificate General Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
667. Goford Mosfet G33n03D3 30V 33A Dfn3X3 N Mosfet for Pd [May 27, 2022]
[May 27, 2022] GOFORD MOSFET G33N03D3 30V 33A DFN3X3 N MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
668. New Original Mosfet G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 27, 2022]
[May 27, 2022] New Original Mosfet G01N20L 200V 2A SOT-23-3L Mosfet for PD General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
669. Fdn337n Substitute Mosfet Transistor 3400L 30V 5.6A N Channel Sot-23 [May 24, 2022]
[May 24, 2022] FDN337N Substitute Mosfet Transistor 3400L 30V 5.6A N CHANNEL SOT-23 General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
670. Electronic Components 3400 40V 50A Sot-23 Power Transistor China Supplier [May 24, 2022]
[May 24, 2022] Electronic Components 3400 40V 50A SOT-23 Power Transistor China Supplier General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
671. Goford G16n03s 30V 12A N Channel Mosfet with Sop-8 Package [May 21, 2022]
[May 21, 2022] GOFORD G16N03S 30V 12A N Channel MOSFET with SOP-8 Package General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
672. IC Component G08n02L 20V 8A 10mohm Sot-23-3L N Channel Mosfet [May 21, 2022]
[May 21, 2022] IC Component G08N02l 20V 8A 10mohm SOT-23-3L N Channel MOSFET General Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
673. G01n20L Mosfet 200V 2A Sot-23-3L Package Transistor China Manufacturer [May 21, 2022]
[May 21, 2022] G01N20L MOSFET 200V 2A SOT-23-3L Package Transistor China Manufacturer General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
674. Free Sample G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge [May 21, 2022]
[May 21, 2022] Free Sample G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
675. Equivalent Transistor Fqd10n20L Substitute Mosfet of 200V 9A Dpak [May 21, 2022]
[May 21, 2022] Equivalent Transistor FQD10N20L Substitute MOSFET of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
