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40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247
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2161.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 650V Trench FS IGBT DGC80F65M TO-247
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2162.

80A 650V Trench FS IGBT DGC80F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247
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2163.

75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247
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2164.

60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM
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2165.

75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM Open Details in New Window [Aug 09, 2026]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F
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2166.

20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247
Contact Now

2167.

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B
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2168.

6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 120V Insulated Gate Bipolar Transistor IGBT G15N120D TO-247
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2169.

15A 120V Insulated Gate Bipolar Transistor IGBT G15N120D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220
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2170.

15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F120M2 TO-247
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2171.

40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40F120M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trench FS IGBT DHG50T65LBBW TO-247
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2172.

50A 650V Trench FS IGBT DHG50T65LBBW TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG60N65D TO-247
Contact Now

2173.

60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG60N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Fixtec Professional LED Flashlight 500lm 7-Mode Main+Side Light 1200mAh USB-C Rechargeable Sos Red ...
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2174.

Fixtec Professional LED Flashlight 500lm 7-Mode Main+Side Light 1200mAh USB-C Rechargeable Sos Red ... Open Details in New Window [Jul 23, 2026]

Product Category Product Description -High-Impact ABS Polymer Body: Military-grade ABS construction provides superior drop resistance and lightweight portability at just 110g net weight. -Premium High-Lumen LED Chip: ...

Company: EBIC Tools Co., Ltd.

Laiyuan China Factory 245*85mm Curved Type IR Ceramic Heating Element 220V 650W Ceramic Infrared ...
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2175.

Laiyuan China Factory 245*85mm Curved Type IR Ceramic Heating Element 220V 650W Ceramic Infrared ... Open Details in New Window [May 25, 2026]

Ceramic Infrared Heater Parameter Selection Table Product Name Ceramic Infrared Heater Product Type Flat/Hollow/Curved/Round Operating Voltage 110V/120V/220V/230V/380V/Customized Power Range 50W~2500W/Customized Peak ...

Company: Yancheng Laiyuan Electric Equipment Co. Ltd