Jiangsu Profile
Product List
2146. 40A 1200V Automotive Grade Power MOSFET G40N120D TO-247 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
2147. 60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC60F65M TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
2148. 15A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG15T65DLBBF TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...
2149. 20A 650V Insulated Gate Bipolar Transistor IGBT DHG20T65D TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
2150. 40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H65M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2151. 40A 1200V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC40H120M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
2152. 60A 650V Insulated Gate Bipolar Transistor IGBT G60N65D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
2153. 6A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGD06F65M2 TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
2154. 75A 650V Half Bridge IGBT Module DGA75H65M2T 34MM [Jul 21, 2026]
[Jul 21, 2026] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
2155. 75A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC75F65M TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
2156. 300W Poly Solar Panel Solar Energy Equipment Supplier Basic Photovoltaic System for Power Generation [Jun 29, 2026]
[Jun 29, 2026] GKA60P(265-300W) 5BB POLY CRYSTALLINE MODULE 5 Busbar Soalr Cell: 5 busbar cell design improves module efficiency and offers better aesthe tic appearance for rooftop in stallation. High Efficiency: Higher ...
Company: Nantong Gamko New Energy Co., Ltd.
2157. Modulo IGBT Mejorado Para Vehiculos Hibridos Avanzados Y Autobuses Electricos Module IGBT Gd50 [Jun 22, 2026]
[Jun 22, 2026] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
2158. All Power Semiconductor IGBT Rectifier Diode Mosfets SCR Bridge Rectifier Module IGBT/Mosfet Power ... [Jun 22, 2026]
[Jun 22, 2026] Product Description HCG100FS120E1B VcES=1200V,Ic (nom)=100A Features Low inductive design Low Vcesat with high junction temperature Fast &soft reverse recovery anti-parallel FWD Low Switching ...
2159. Laiyuan 245*85mm IR Ceramic Heating Panel 220V 750W Infrared Ceramic Heater for Hot Stamping Machine [May 09, 2026]
[May 09, 2026] Product Model TCW-24585 220750 Voltage 220V Power 750W Product Size 245*85MM Net Weight 0.5KG Material Ceramic Product Specifications Product Name Ceramic Infrared Heating ...
2160. Laiyuan 240*60 Flat Hollow Type 220V 1000W Ceramic Infrared Heating Panel Ceramic Heater [May 09, 2026]
[May 09, 2026] Product Model TCW-24060 2201000 Voltage 220V Power 1000W Product Size 240*60MM Net Weight 0.2KG Material Ceramic Product Specifications Product Name Ceramic Infrared Heating ...
