Jiangsu Profile
Product List
1936. Infrared Ray Heating Element Ceramic Infrared Sauna Heater 
[Oct 30, 2024]
[Oct 30, 2024] Sauna Room Ceramic Infrared Tube Heater Technical Parameters Tube Material Carbon silicone ceramic wavelength 3 μ~ 50 μ Diameter 10mm, 12mm, 14mm, 16mm, 20mm and other can be ...
Company: Yancheng Hongtai Alloy Electric Apparatus Co., Ltd.
1937. Topright Infrared Ceramic Heating Plate with Stainless Steel Casing Heater [Aug 27, 2024]
[Aug 27, 2024] Product Description Infrared ceramic heater Description: Ceramic infrared heaters are 96% infrared energy efficient. Uses for electric infrared heat can be found in many industries and applications and can be ...
1938. 230V/400V Twin-Tube Quartz Infrared Gold Reflector Fast Medium-Wave Short-Wave Twin-Tube Lamp [Aug 12, 2024]
[Aug 12, 2024] 230V/400V Twin-Tube Quartz Infrared Gold Reflector Fast Medium-Wave Short-Wave Twin-Tube Lamp Compared with convection heating and traditional heating, radiation is a powerful and efficient heating method. In fact, ...
1939. 10V 120V 220V 230V 240V Far Infrared Ceramic Heater for Thermoforming [Jul 04, 2024]
[Jul 04, 2024] Ceramic infrared heater is made out of ceramics. 1. Radioactive properties: a maximum monochromatic radiation components reached 0.9, the normal total radiation rate is greater than 0.83. 2. Thermal response time: ...
Company: Yancheng Vinson Technology Co., Ltd.
1940. 330V Carbon Fiber Quartz Infrared Heating Lamp [Jul 02, 2024]
[Jul 02, 2024] Product Description Preheating Glass Twin Quartz Heating Tube Preheating glass twin quartz heating tube provides infrared energy with a fast heat up and cool down time while creating temperatures ranging from 1000 ...
Company: Lianyungang Yongsin Quartz Co., Ltd.
1941. Quartz Tube IR Heater Lamp Ceramic Heating Tube [Jul 01, 2024]
[Jul 01, 2024] Product Description Preheating Glass Twin Quartz Heating Tube Preheating glass twin quartz heating tube provides infrared energy with a fast heat up and cool down time while creating temperatures ranging from 1000 ...
Company: Lianyungang Yongsin Quartz Co., Ltd.
1942. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1943. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1944. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1945. 75A 650V 34mm Half Bridge IGBT Module [Jun 24, 2024]
[Jun 24, 2024] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
1946. 30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
1947. Insulated Gate Bipolar Transistor IGBT G15n60d to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
1948. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
1949. Insulated Gate Bipolar Transistor IGBT G30n60d to-247 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
1950. 60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
