Jiangsu Profile
Famous Export Brand
Product List
1906. Infrared Quartz Lamp Replacement 460mm 1000W Quartz Heating Tube 
[Oct 22, 2025]
[Oct 22, 2025] infrared quartz lamp replacement 460mm 1000w quartz heating tube Compared with convection heating and traditional heating, radiation is a powerful and efficient heating method. In fact, the radiation does not need to ...
1907. Medium Wave Infrared Lamp with Gild Coating for Glass Annealing [Oct 22, 2025]
[Oct 22, 2025] Medium Wave Infrared Lamp with Gild Coating for Glass Annealing Compared with convection heating and traditional heating, radiation is a powerful and efficient heating method. In fact, the radiation does not need to ...
1908. 380V 4000W Medium Wave Infrared Lamp Water Drying Heating Infrared Lamp [Oct 22, 2025]
[Oct 22, 2025] 380V 4000W Medium Wave Infrared Lamp Water Drying Heating Infrared Lamp Compared with convection heating and traditional heating, radiation is a powerful and efficient heating method. In fact, the radiation does not ...
1909. Insulated Gate Bipolar Transistor IGBT G30n60d to-247 [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
1910. 6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...
1911. 1700V IGBT Module Dgc75c170m2t [Jun 25, 2025]
[Jun 25, 2025] 75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...
1912. 30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...
1913. 75A 650V 34mm Half Bridge IGBT Module [Jun 23, 2025]
[Jun 23, 2025] 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...
1914. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
1915. 40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1916. 40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
1917. 60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
1918. 20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
1919. 15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...
1920. 80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...
