Jiangsu Profile
Product List
3781. N-channel Enhancement Mode Power MOSFET JMTK50N06B TO-252-4R 
[Jul 03, 2023]
[Jul 03, 2023] Product Description Features 60V, 50A RDS(ON) <17mΩ @ VGS = 10V RDS(ON) <25mΩ @ VGS = 4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3782. P-channel Enhancement Mode Power MOSFET JMTK440P04A TO-252 [Jul 03, 2023]
[Jul 03, 2023] Product Description Features VDS= -40V, ID= -10A RDS(ON) < 44mΩ @ VGS = -10V RDS(ON) < 60mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3783. N-channel Enhancement Mode Power MOSFET JMTL3134KT7 SOT-723-3L [Jun 29, 2023]
[Jun 29, 2023] Product Description Features 20V, 0.75A RDS(ON)< 160mΩ @ VGS =4.5V RDS(ON)< 260mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ESD ...
3784. Dual P-channel Enhancement Mode Power MOSFET JMTP160P03D SOP-8 [Dec 12, 2022]
[Dec 12, 2022] Product Description Features VDS= -30V, ID= -11A RDS(ON) <16.5mΩ @ VGS = -10V RDS(ON) < 26.5mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3785. Dual P-channel Enhancement Mode Power MOSFET JMTP4953A SOP-8 [Dec 08, 2022]
[Dec 08, 2022] Product Description Features VDS= -30V, ID= -5.1A RDS(ON) < 55mΩ @ VGS = -10V RDS(ON) < 90mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3786. P-channel Enhancement Mode Power MOSFET JMTL850P04A SOT-23 [Nov 30, 2022]
[Nov 30, 2022] Product Description Features VDS= -40V, ID= -5A RDS(ON) < 90mΩ @ VGS = -10V RDS(ON) < 125mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3787. G6p06 P Channel 60V 4A Mosfet Irf7342 Substitute Transistor Mosfet [Sep 28, 2022]
[Sep 28, 2022] Product Description G6P06 p channel 60V 4A mosfet IRF7342 substitute transistor mosfet Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3788. G50n03K 30V 65A IGBT Module Transistor Mosfet (TO-252 package) [Aug 19, 2022]
[Aug 19, 2022] Product Description G50n03K 30V 65A IGBT module transistor mosfet (TO-252 package) Part Number G50N03K VDSS 30V ID 65A RDS 5.2 mΩ @ vgs=10V Vth 1.45V Package TO-252 Ciss 950 pF Crss 160 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3789. Gt45n06 N Channel 60V 45A Mosfet for Solarlok PCB Enclosure Junction Box [Aug 19, 2022]
[Aug 19, 2022] Product Description Gt45n06 N Channel 60V 45A Mosfet for SOLARLOK PCB Enclosure Junction Box Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3790. Semiconductor IC Power Mosfet G65p06t -60V -65A to-220 [Jun 14, 2022]
[Jun 14, 2022] Product Description Semiconductor IC Power Mosfet G65P06T -60V -65A TO-220 Part Number G65P06T VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-220 Ciss 5814 pF Crss 234 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3791. P Channel Transistor 25p06 -60V -25A Mosfet Substitute for Irfr5305trpbf [Jun 14, 2022]
[Jun 14, 2022] Product Description P channel transistor 25P06 -60V -25A mosfet substitute for IRFR5305TRPBF Part Number 25P06 VDSS -60V ID -25A RDS 39mΩ @ vgs=10V Vth -2.9V Package TO-252 Ciss 3430 pF Crss 272 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3792. New Original Mosfet Gc11n65t 650V 11A to-220 Mosfet [Jun 14, 2022]
[Jun 14, 2022] Product Description New Original Mosfet GC11N65T 650V 11A TO-220 MOSFET Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature rise: lower power ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3793. RoHS Compliant Gt52n10t 100V 80A to-220 Mosfet for Smart Module Junction Box [May 26, 2022]
[May 26, 2022] Product Description RoHS Compliant GT52N10T 100V 80A TO-220 MOSFET for Smart Module Junction Box Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3794. 650V 11A High Voltage Gc11n65K Sj Mosfet for BMS Application [Mar 18, 2022]
[Mar 18, 2022] Product Description 650V 11A High Voltage GC11N65K SJ Mosfet for BMS application Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature rise: lower ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3795. LED Driver Transistor 630A 200V 9A to-251 Mosfet (electronic components distributor) [Mar 18, 2022]
[Mar 18, 2022] Product Description LED Driver Transistor 630A 200V 9A to-251 Mosfet (electronic components distributor) Part Number 630A VDSS 200V ID 9A RDS 210 mΩ @ vgs=10V Vth 1.6V Package TO-251 Ciss 509 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
