Jiangsu Profile
Product List
3676. N-channel Enhancement Mode Power MOSFET JMTK100N02A TO-252-4R 
[Dec 20, 2022]
[Dec 20, 2022] Product Description Features 20V, 30A RDS(ON)< 11.2mΩ @ VGS =4.5V RDS(ON)< 17.5mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3677. N-channel Enhancement Mode Power MOSFET JMTE035N04A TO-263 [Dec 16, 2022]
[Dec 16, 2022] Product Description Features 40V, 150A RDS(ON) <4mΩ @ VGS = 10V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application PWM Applications ...
3678. N-channel Enhancement Mode Power MOSFET 2312A SOT-23 [Dec 13, 2022]
[Dec 13, 2022] Product Description Features 20V, 6.8A RDS(ON)< 21mΩ @ VGS =4.5V RDS(ON)< 30mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3679. Dual P-channel Enhancement Mode Power MOSFET JMTP160P03D SOP-8 [Dec 12, 2022]
[Dec 12, 2022] Product Description Features VDS= -30V, ID= -11A RDS(ON) <16.5mΩ @ VGS = -10V RDS(ON) < 26.5mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3680. N-channel Enhancement Mode Power MOSFET JMTL3416KS SOT-23 [Dec 08, 2022]
[Dec 08, 2022] Product Description Features 20V, 5A RDS(ON)< 22mΩ @ VGS =4.5V RDS(ON)< 36mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ESD ...
3681. Dual P-channel Enhancement Mode Power MOSFET JMTP4953A SOP-8 [Dec 08, 2022]
[Dec 08, 2022] Product Description Features VDS= -30V, ID= -5.1A RDS(ON) < 55mΩ @ VGS = -10V RDS(ON) < 90mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3682. Dual N-channel Enhancement Mode Power MOSFET JMTM8205A SOT23-6L [Dec 07, 2022]
[Dec 07, 2022] Product Description Features 20V, 5A RDS(ON)<26mΩ @ VGS =4.5V RDS(ON)<34mΩ @ VGS =2.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3683. Dual N-channel Enhancement Mode Power MOSFET JMTM3406D SOT-23-6L [Dec 05, 2022]
[Dec 05, 2022] Product Description Features 30V, 3.8A RDS(ON)<38mΩ @ VGS =10V RDS(ON)<65mΩ @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3684. P-channel Enhancement Mode Power MOSFET JMTL850P04A SOT-23 [Nov 30, 2022]
[Nov 30, 2022] Product Description Features VDS= -40V, ID= -5A RDS(ON) < 90mΩ @ VGS = -10V RDS(ON) < 125mΩ @ VGS = -4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3685. 14D270K electronic components semiconductor Varistors [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 11 VRMS to 1000 VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
3686. 05D471K electronic components semiconductor Varistors [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 11VRMS to 460VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
3687. 650V 11A High Voltage Gc11n65t IC Transistor Mosfet for Adapter (AOT11S65L) [Aug 19, 2022]
[Aug 19, 2022] Product Description 650V 11A high voltage GC11N65T ic transistor mosfet for adapter (AOT11S65L) Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3688. G50n03K 30V 65A Power Transistor P1703bdg Equivalent Mosfet Factory Direct [Aug 19, 2022]
[Aug 19, 2022] Product Description G50N03K 30V 65A power transistor P1703BDG equivalent mosfet factory direct Part Number G50N03K VDSS 30V ID 65A RDS 5.2 mΩ @ vgs=10V Vth 1.45V Package TO-252 Ciss 950 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3689. Hot Sale Gt52n10t 100V 80A to-220 Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description Hot Sale GT52N10T 100V 80A TO-220 MOSFET Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, smaller chip size and better Rdson. Part ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3690. Ssm6j501nu, Lf Alternative Mosfet 1216D2 12V 16A Dfn Pakage Mosfet [Jun 23, 2022]
[Jun 23, 2022] Product Description SSM6J501NU,LF Alternative MOSFET 1216D2 12V 16A DFN Pakage MOSFET Product Parameters You may like For more products details, please contact us ! Packaging & Shipping 1. The order ...
Company: Wuxi Goford Semiconductor Co., Ltd.
