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S30p40alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer

3511.

S30p40alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.76mm×0.76mm IF 1000mA VR 40V IR 10μA VF1 0.56V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S28n60aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer

3512.

S28n60aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.71mm×0.71mm IF 1000mA VR 60V VF1 0.66V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S28n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer

3513.

S28n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.71mm×0.71mm IF 1000mA VR 40V VF1 0.55V IR 50μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S28n20aly5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer

3514.

S28n20aly5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.71mm×0.71mm IF 1000mA VR 20V VF1 0.45V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S24n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer

3515.

S24n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.61mm×0.61mm IF 750mA VR 40V VF1 0.6V IR 500μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S24n20aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer

3516.

S24n20aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.61mm×0.61mm IF 750mA VR 20V VF1 0.47V IR 200μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S68h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3517.

S68h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.73mm×1.73mm IF 5A VR 60V IR 3μA VF 0.71V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S26n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3518.

S26n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 1.14mm×1.14mm IF 2A VR 60V IR 25μA VF 0.63V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S35n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3519.

S35n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.89mm×0.89mm IF 2A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S32h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3520.

S32h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.81mm×0.81mm IF 1A VR 100V IR 5μA VF 0.85V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S32n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3521.

S32n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.81mm×0.81mm IF 1A VR 60V IR 100μA VF 0.62V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S32n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3522.

S32n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.81mm×0.81mm IF 1A VR 40V IR 100μA VF 0.52V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S28n40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3523.

S28n40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.71mm×0.71mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

S26n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer

3524.

S26n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer Open Details in New Window [Dec 10, 2020]

Die Size 0.66mm×0.66mm IF 1A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.

Jtr0250b3/B4 4-Inch Triacs Thyristor Chips/Silicon Wafer

3525.

Jtr0250b3/B4 4-Inch Triacs Thyristor Chips/Silicon Wafer Open Details in New Window [Dec 09, 2020]

Die Size 2.5mm×2.5mm VDRM 600V VRRM 600V IT 6A ITSM 60A IGT(MAX.) 25/25/25/75mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...

Company: Yangzhou Genesis Microelectronics Co., Ltd.