Jiangsu Profile
Product List
3511. S68h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer 
[Dec 10, 2020]
[Dec 10, 2020] Die Size 1.73mm×1.73mm IF 5A VR 60V IR 3μA VF 0.71V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3512. S26n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 60V IR 25μA VF 0.63V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3513. S35n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.89mm×0.89mm IF 2A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3514. S32h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 100V IR 5μA VF 0.85V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3515. S32n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 60V IR 100μA VF 0.62V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3516. S32n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 40V IR 100μA VF 0.52V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3517. S28n40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3518. S26n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.66mm×0.66mm IF 1A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3519. Jtr0250b3/B4 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2.5mm×2.5mm VDRM 600V VRRM 600V IT 6A ITSM 60A IGT(MAX.) 25/25/25/75mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3520. Rgg Wirewound Resistor for PCB (RX27-5) [May 16, 2023]
[May 16, 2023] Characteristics of wirewound resistor: . Temperature coefficient: +/-300ppm/oC . Insulation resistance: >100M ohms . Load life (1000 hours): +/-2%, +0.05 ohm . Short-time overload: +/-2%, +0.05 ohm . Dielectric ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
3521. Metal Oxide Film Resistor (MOF 1/2W, 1W, 2W, 3W) [Jan 20, 2025]
[Jan 20, 2025] Perfect oxide resistant and thermal stability; Perfect pulse, high frequency load; Temperature coefficient, wide rates power range; Power: 1/2W, 1W, 2W, 3W; Value: 1Ω -75K, 1Ω -100K, 1Ω -120K, ...
Company: Yancheng Hyde Electronics Co., Ltd.
3522. Jtr0320b4 4-Inch SCR Thyristor Chip/Silicon Wafer [Mar 02, 2022]
[Mar 02, 2022] Die Size 3.2mm×3.2mm VDRM 600V VRRM 600V IT 12A ITSM 120A IGT(MAX.) 30/50/50/70mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3523. 9014 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 350μ m×350μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3524. Bc817 5-Inch Small Signal Transistor Chips/Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 490μ m×490μ m BVCEO 45V BVCBO 50V BVEBO 6V hFE 125-600 VCE(sat) 0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3525. 13001 4-Inch High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 820μ m×820μ m BVCEO 410/480V BVCBO 700V BVEBO 9V hFE 15-40 VCE(sat) 0.5V fT 5MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
