Jiangsu Profile
Product List
3496. Fixed Resistor 1/2W 22kohm Bulk Packing of Carbon Film Resistor 
[Mar 04, 2025]
[Mar 04, 2025] Product Description Features: 1. Good stability, high frequency characteristics; 2. With negative temperature coefficient, noise electromotive force is small; 3. Wide resistance range, stable pulse load; 4. ...
Company: Yancheng Hyde Electronics Co., Ltd.
3497. Fixed Resistor 1/2W Bulk Packing of Carbon Film Resistor [Jan 20, 2025]
[Jan 20, 2025] Product Description Features: 1. Good stability, high frequency characteristics; 2. With negative temperature coefficient, noise electromotive force is small; 3. Wide resistance range, stable pulse load; 4. ...
Company: Yancheng Hyde Electronics Co., Ltd.
3498. Rgg10 Ceramic Wire Wound Resistor [May 16, 2023]
[May 16, 2023] Characteristics of ceramic resistor: . Temperature coefficient: +/-300ppm/oC . Insulation resistance: >100M ohms . Load life (1000 hours): +/-2%, +0.05 ohm . Short-time overload: +/-2%, +0.05 ohm . Dielectric ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
3499. Wirewound Resistor with ISO9001 (Rx27-3c) [May 16, 2023]
[May 16, 2023] Specifications of Wirewound Resistor with ISO9001 (Rx27-3c): 1. Rx27 cement resistors have many kinds of types. 2. Performances are stable 3. ROHS certification. Features of Wirewound Resistor with ISO9001 ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
3500. Jtr0160b4 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.60mm×1.60mm VDRM 600V VRRM 600V IT 2A ITSM 20A IGT(MAX.) 10/10/10/20mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3501. Jtr0180b4 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.80mm×1.80mm VDRM 600V VRRM 600V IT 4A ITSM 40A IGT(MAX.) 10/10/10/30mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3502. Jtr0190b3 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.90mm×1.90mm VDRM 600V VRRM 600V IT 4A ITSM 35A IGT(MAX.) 20/20/20/-mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3503. Bas70 4-Inch Small-Signal Schottky Diode Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.23mm×0.23mm IF 70mA VR 73V VF/VF1 0.95/0.39V IR 0.09μA CT 2pF trr 5ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
3504. S30p20alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.76mm×0.76mm IF 1000mA VR 20V IR 30μA VF1 0.5V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3505. S30p40alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.76mm×0.76mm IF 1000mA VR 40V IR 10μA VF1 0.56V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3506. S28n60aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 60V VF1 0.66V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3507. S28n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 40V VF1 0.55V IR 50μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3508. S28n20aly5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 20V VF1 0.45V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3509. S24n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 40V VF1 0.6V IR 500μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3510. S24n20aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 20V VF1 0.47V IR 200μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
