Jiangsu Profile
Product List
84616. 12A 100V N-Channel Enhancement Mode Power MOSFET DH850N10B TO-251B 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
84617. 180A 80V N-Channel Enhancement Mode Power MOSFET DH8004 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHI8004/ DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
84618. 40A 60V Schottky Barrier Diode MBRF40R60CT TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 60 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...
84619. 60A 200V Schottky Barrier Diode MBR60200CT TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 200 V RMS Reverse Voltage VR(RMS) 160 V DC Blocking Voltage VR 200 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...
84620. 20A 650V SiC Schottky Barrier Diode DCD20D65G4 TO-252 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
84621. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS037N10F TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...
84622. 120A 98V N-Channel Enhancement Mode Power MOSFET DHS046N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...
84623. 40A 100V P-Channel Enhancement Mode Power MOSFET DH100P40D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P40D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -40 A (T=100ºC) -28 A Drain ...
84624. 250A 40V N-Channel Enhancement Mode Power MOSFET DH019N04D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH019N 04 DH019N04I DH019N04E DH019N04B DH019N04D DH019N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
84625. 180A 68V N-Channel Enhancement Mode Power MOSFET DHS026N06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
84626. 220A 68V N-Channel Enhancement Mode Power MOSFET DHS031N07 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
84627. 21A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10LB TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
84628. 30A 600V Fast Recovery Diode MURF3060 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
84629. 80A 40V N-Channel Enhancement Mode Power MOSFET DH065N04D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE DH065N04D UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 56 A Drain ...
84630. 20A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13 A Drain ...
