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25A 650V SiC Schottky Barrier Diode DCET20D65G3 TO-263
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32236.

25A 650V SiC Schottky Barrier Diode DCET20D65G3 TO-263 Open Details in New Window [Aug 09, 2026]

25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 600V Fast Recovery Diode MURE1560 TO-263
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32237.

15A 600V Fast Recovery Diode MURE1560 TO-263 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247
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32238.

70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR6030BCT TO-247
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32239.

60A 300V Fast Recovery Diode MUR6030BCT TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247
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32240.

50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247
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32241.

75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MURF1040CT TO-220F
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32242.

10A 400V Fast Recovery Diode MURF1040CT TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 200V Fast Recovery Diode MUR1620CT TO-252
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32243.

16A 200V Fast Recovery Diode MUR1620CT TO-252 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20D TO-252
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32244.

20A 100V P-Channel Enhancement Mode Power MOSFET DH100P20D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode MUR80FU40BCT TO-247
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32245.

80A 400V Fast Recovery Diode MUR80FU40BCT TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6
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32246.

105A 40V N-Channel Enhancement Mode Power MOSFET DH025N04P DFN5*6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH025N04P Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C
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32247.

96A 30V N-Channel Enhancement Mode Power MOSFET DH030N03 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 600V Fast Recovery Diode MUR4060BCT TO-247
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32248.

40A 600V Fast Recovery Diode MUR4060BCT TO-247 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Schottky Barrier Diode MBR20100CT TO-220C
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32249.

20A 100V Schottky Barrier Diode MBR20100CT TO-220C Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E TO-263
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32250.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E TO-263 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd