Jiangsu Profile
Product List
6016. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c 
[Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
6017. 120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
6018. 33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...
6019. 120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
6020. 135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
6021. 130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 [Jun 26, 2026]
[Jun 26, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
6022. 120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
6023. Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06D to-252 [Jun 26, 2026]
[Jun 26, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
6024. Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
6025. Hot Sale 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85D to-252 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
6026. Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
6027. Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 45 A Drain ...
6028. Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252 [Jun 26, 2026]
[Jun 26, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
6029. Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
6030. Hot Sale 33A 60V N-Channel Enhancement Mode Power Mosfet Dh240n06ld to-252b [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE/DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
