Jiangsu Profile
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5956. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 
[Jun 26, 2026]
[Jun 26, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
5957. 120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h055r to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5958. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5959. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
5960. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5961. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs022n06e [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS022N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5962. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07e to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5963. Dh3205p to-220c 110A 55V Mosfets P-Channel Enhancement Mode Power Mosfet [Jun 26, 2026]
[Jun 26, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 110 A BVGSS ±20 V VTH 2 4 V EAS - - 1440 mJ Ptot - - 200 W Rdson 6.8 - 8.0 mΩ ...
5964. 130A 60V N-Channel Enhancement Mode Power Mosfet Dhs130n06e to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5965. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30A [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30A DH100P30AI/DH100P30AE DH100P30AB/DH100P30A DH100 P30AF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5966. 150V 150A N-Channel Enhancement Mode Power Mosfet DSG059n15na to-220c [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 106 A Drain ...
5967. 130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
5968. 140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
5969. 180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
5970. 120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c [Jun 26, 2026]
[Jun 26, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
