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130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263
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4006.

130A 40V N-Channel Enhancement Mode Power Mosfet Dh025n04e to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH025N04 /DH025N04E DH025N04B/DH025N04D DH025N0 4F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Panel Type Kp2000A 2500V High Power Electronic Component Phase-Controlled Rectification Power ...
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4007.

Panel Type Kp2000A 2500V High Power Electronic Component Phase-Controlled Rectification Power ... Open Details in New Window [Jul 24, 2025]

Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Disc Type Kk Chinese Fast Turn on Phased Rectification Parallel Connection High Voltage Thyristor ...
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4008.

Disc Type Kk Chinese Fast Turn on Phased Rectification Parallel Connection High Voltage Thyristor ... Open Details in New Window [Jul 24, 2025]

Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07
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4009.

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06
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4010.

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 Open Details in New Window [Jun 23, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
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4011.

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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4012.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
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4013.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263
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4014.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251
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4015.

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Kp2000A 2500V SCR Phase Control High Voltage High-Performance Panel Type Fast Switching Thyristor ...
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4016.

Kp2000A 2500V SCR Phase Control High Voltage High-Performance Panel Type Fast Switching Thyristor ... Open Details in New Window [Apr 18, 2025]

Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10
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4017.

Hot Sale 70A 100V N-Channel Enhancement Mode Power Mosfet Fd70n10 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 73 A (T=100ºC) 51 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
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4018.

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b
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4019.

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263
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4020.

120A 80V N-Channel Enhancement Mode Power Mosfet Dse047n08n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd