Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Control Device

» Jiangsu Product List

Product List

120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c
Contact Now

12436.

120A100V N-Channel Enhancement Mode Power Mosfet D120n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT D120N10ZR/ ED120N10ZR FD120N10 ZR Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c
Contact Now

12437.

49A 80V N-Channel Enhancement Mode Power Mosfet Dh116n08 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH116 N08/ DH116 N08E/ DH116 N08B/ DH116 N08D DH116 N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c
Contact Now

12438.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b
Contact Now

12439.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh1K1n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f
Contact Now

12440.

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f
Contact Now

12441.

150V/9.5mΩ /52A N-Mosfet Dhs110n15f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS110N15/DHS110N15I/DHS110N15E DHS110N15F Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c
Contact Now

12442.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG052n14n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b
Contact Now

12443.

20A 60V P-Channel Enhancement Mode Power Mosfet Dh500p06D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH500P06/ DH500P06E/ DH500P06B/ DH500P06D DH500P06F Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c
Contact Now

12444.

9A 200V N-Channel Enhancement Mode Power Mosfet 630 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 630/I630/E630/B630/D630 F630 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b
Contact Now

12445.

100A 68V N-Channel Enhancement Mode Power Mosfet Dh060n07D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b
Contact Now

12446.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c
Contact Now

12447.

220A 68V N-Channel Enhancement Mode Power Mosfet Dhs031n07 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS031N07/DHS031N07E/ DHS031N07B/DHS03 1N07D DHS03 1N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c
Contact Now

12448.

140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c
Contact Now

12449.

68A 100V N-Channel Enhancement Mode Power Mosfet Dh140n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH140N10 DH140N10B/ DH140N10D/ DH140N10E DH140N10 F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b
Contact Now

12450.

320A 30V N-Channel Enhancement Mode Power Mosfet Dh012n03D to-252b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd