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74836. Semiconductor ALD CVD Precursor Hexachlorodisilane HCDS CAS 13465-77-5 
[Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74837. Semiconductor Grade HCDS Hexachlorodisilane for Atomic Layer Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74838. Hexachlorodisilane Hcds 5n Precursor for Ald CVD and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74839. Hexachlorodisilane Supplier HCDS Precursor for Semiconductor ALD and CVD Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74840. High Purity Hexachlorodisilane HCDS for Semiconductor ALD CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74841. Semiconductor Grade Hcds 5n Hexachlorodisilane 99 999% Ald CVD Lpcvd Precursor Si2cl6 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74842. Hexachlorodisilane Supplier 5n Hcds Semiconductor Precursor for Ald and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74843. High Purity Semiconductor Grade Hexachlorodisilane Hcds for Ald CVD Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74844. High Purity Si2cl6 Hexachlorodisilane 5n Hcds Semiconductor Ald CVD Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74845. Semiconductor Precursor Hcds 99 999% Hexachlorodisilane for Ald CVD Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74846. Hexachlorodisilane Si2cl6 5n 99 999% High Purity Semiconductor Precursor Ald CVD Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74847. High Purity Si2cl6 Hexachlorodisilane for Semiconductor Ald Precursor Applications [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74848. HCDS 99 999% Hexachlorodisilane 5N Semiconductor Precursor for ALD CVD LPCVD Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74849. 5n Semiconductor Grade Hcds Hexachlorodisilane for Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
74850. High Purity 5n 99.999% Hexachlorodisilane Hcds Semiconductor Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
