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100V/1.7MΩ /240A N-Mosfet Dse022n10n3 to-263
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204646.

100V/1.7MΩ /240A N-Mosfet Dse022n10n3 to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263
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204647.

170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/4.0MΩ /66A N-Mosfet DSP060n04la Dfn5X6
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204648.

40V/4.0MΩ /66A N-Mosfet DSP060n04la Dfn5X6 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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204649.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jul 16, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.5MΩ /100A N-Mosfet Dsd065n10L3a to-252
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204650.

100V/5.5MΩ /100A N-Mosfet Dsd065n10L3a to-252 Open Details in New Window [Jul 16, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120V/12MΩ /70A N-Mosfet Dse140n12n3 to-263
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204651.

120V/12MΩ /70A N-Mosfet Dse140n12n3 to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5MΩ /115A N-Mosfet Dse090n15n3a to-263
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204652.

150V/7.5MΩ /115A N-Mosfet Dse090n15n3a to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11MΩ /110A N-Mosfet Dsn108n20n to-3pn
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204653.

200V/11MΩ /110A N-Mosfet Dsn108n20n to-3pn Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200V/11MΩ /110A N-Mosfet Dse108n20na to-263
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204654.

200V/11MΩ /110A N-Mosfet Dse108n20na to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263
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204655.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6
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204656.

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6
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204657.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 Open Details in New Window [Jul 16, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6
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204658.

47A 100V N-Channel Enhancement Mode Power Mosfet Dh135n10p Dfn5X6 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6
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204659.

64A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06p Dfn5X6 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6
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204660.

108A 100V N-Channel Enhancement Mode Power Mosfet Dhs051n10p Dfn5X6 Open Details in New Window [Jul 16, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd