Jiangsu Profile
Product List
1321. 99 999% Hcds Si2cl6 High Purity Hexachlorodisilane Semiconductor Precursor 
[Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1322. Semiconductor Precursor Hcds 99 999% Hexachlorodisilane for Ald CVD Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1323. High Purity 5n Hexachlorodisilane Hcds Semiconductor Precursor for Ald CVD [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1324. Hexachlorodisilane Si2cl6 5n High Purity Precursor for Semiconductor Deposition [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1325. Hexachlorodisilane Supplier 5n Hcds for Semiconductor Ald CVD Deposition [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1326. High Purity 5n Hexachlorodisilane Hcds Semiconductor Ald CVD Lpcvd Precursor Si2cl6 [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1327. HCDS 99 999% Hexachlorodisilane 5N Semiconductor Precursor for ALD CVD LPCVD Processes [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1328. Semiconductor Precursor HCDS 5N Hexachlorodisilane Si2Cl6 for ALD CVD LPCVD [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1329. High Purity HCDS 5N Hexachlorodisilane Semiconductor Precursor for ALD and CVD [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1330. HCDS for CVD LPCVD ALD 5N 99 999% Hexachlorodisilane Semiconductor Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1331. Semiconductor Grade Hexachlorodisilane HCDS 5N High Purity Precursor for ALD CVD [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1332. High Purity 5n 99.999% Hexachlorodisilane Hcds Semiconductor Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1333. High Purity Si2cl6 Hexachlorodisilane 5n Hcds Semiconductor Ald CVD Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1334. Hexachlorodisilane 268 89 G/Mol Hcds 5n Semiconductor Grade Ald CVD Precursor [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1335. Hexachlorodisilane Si2cl6 5n 99 999% High Purity Semiconductor Precursor Ald CVD Lpcvd [Oct 22, 2026]
[Oct 22, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
