Jiangsu Profile
Product List
1306. Kaimei TiCl4 Titanium Tetrachloride for Semiconductor Grade Applications 
[Oct 20, 2026]
[Oct 20, 2026] Product Description Product Description Product Name: Titanium(IV) chloride Other Names: Titanium tetrachloride; Titanium(IV) chloride solution; Titaniumchloridemin; Titanium; titanium(4+) tetrachloride; Titanium ...
1307. Hexachlorodisilane Supplier 5n Hcds Semiconductor Precursor for Ald and Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1308. Hexachlorodisilane Si2cl6 99 999% Hcds Precursor for Ald and Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1309. High Purity Hcds 5n Hexachlorodisilane for Semiconductor CVD Deposition Processes [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1310. High Purity Hexachlorodisilane Hcds 99 999% Precursor for Semiconductor Deposition Processes [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1311. High Purity 99 999% Hexachlorodisilane Semiconductor Precursor for Ald Deposition [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1312. Hcds for CVD 5n Hexachlorodisilane Semiconductor Grade Precursor Si2cl6 [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1313. Hexachlorodisilane Si2cl6 5n Semiconductor Precursor for Ald CVD Lpcvd Deposition [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1314. 5n Semiconductor Grade Hcds Hexachlorodisilane for Deposition Processes [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1315. High Purity Hexachlorodisilane Hcds 5n Precursor for Semiconductor Processes [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1316. High Purity Si2cl6 Hexachlorodisilane 99 999% Semiconductor Grade Precursor [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1317. Hexachlorodisilane Hcds 5n Precursor for Ald CVD and Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1318. 5n Semiconductor Grade Hexachlorodisilane Hcds Precursor for CVD and Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1319. High Purity Semiconductor Grade Hexachlorodisilane Hcds for Ald CVD Deposition [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
1320. 99 999% Hexachlorodisilane Si2cl6 Semiconductor Grade Hcds Precursor for Ald and CVD [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
