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3046. Transistor MOS Output Module Optocoupler Isolation PLC Amplification Board Microcontroller Io DC ... 
[Jun 03, 2026]
[Jun 03, 2026] Product Description Industrial 16/32 Channel MOSFET Relay Module – PLC Amplification Module MOSFET signal conversion module is a solid-state switching device based on metal oxide semiconductor field-effect transistor ...
3047. Automatic Vibrating System Aluminum Feeder Small Transistor Bowl Feeder [Apr 28, 2025]
[Apr 28, 2025] Vibratory bowl feeders, also known as a bowl feeders, are common devices used to orient and feed individual component parts for assembly on industrial production lines. They are used when a randomly sorted bulk package ...
3048. Wipe Nonwoven Mesh Lyocell Viscose 1/4 Fold Thick Film Transistor Lint-Free Wiper [Feb 02, 2024]
[Feb 02, 2024] Product Description M-3 Non-woven wipe is one of the most popular wipers, which is comprised of 100% Polyester(Economic type), other compositions 30%Rayon and 70% Polyester(Standard), 100% Rayon(High temp ...
Company: Suzhou Hongxun Clean Tech Co. Ltd
3049. Mosfet Transistor IGBT Transistor Heat Sink Plate Aln Aluminum Nitride Ceramic Pad [May 28, 2026]
[May 28, 2026] The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipments such as high-frequency equipment substrate, high power transistor module ...
3050. Electrical Transistor Insulation Aluminum Oxide 95% Al2O3 Alumina Ceramic Heat Sink Plate [Mar 23, 2026]
[Mar 23, 2026] The thickness of Alumina insulator plate can be produced from 0.1mm -----5mm, and the ceramic substrate can be punched and lineated. We can customize to your requirements. Production Details Product ...
3051. High Power Capacity 1.4V Signal Power Amplifier for Broadband Signal Transmission Instrumentation ... [May 22, 2026]
[May 22, 2026] Product Description Product Description The YX14 is specially designed for high-volume designs. It is made of GaAs Shottky diodes which are arranged into the shape of cross-over quad version, typical turn-on voltage is ...
3052. to-220/247 Mosfet Transistor IGBT Transistor Substrates Aln Board Aluminum Nitride Ceramic Thermal ... [Mar 27, 2026]
[Mar 27, 2026] Product Description Aluminum nitride ceramics have good thermal conductivity and high electrical insulation properties, so they are widely used in semiconductor applications. Introduction to Aluminum Nitride ...
3053. Hot Mosfet Transistor Aluminum Ramadan Event Weeding Party Tents for Sale Luxury Marquee Tent [Jan 15, 2026]
[Jan 15, 2026] Accessories of our tents · Covers: colourful cover, transparent cover, inflatable roof cover · Windows: dome or square clear PVC windows, mesh window, glass window for glass ...
3054. 100W 5-6GHz GaN Signal Power Amplifier for Wireless Communication Infrastructure High Electron ... [May 19, 2026]
[May 19, 2026] Product Description Product Description Innotion's YP506012100T is a 100-watt, internally matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and ...
3055. Customized 100*60*10mm DIY Cooler Aluminum Heatsink Radiator Heat Sink for IC LED Power Transistor [Apr 09, 2026]
[Apr 09, 2026] Materials Copper(1020/1100),Aluminum(1060/1070/6063/6061). Surface Treatment Plating,Coating,Painting,Anodizing,Sandblasting,Tapping,Deburring,Chromating,Laser Marking,Degreasing,Passivation,Clearing Processing CNC ...
Company: KOBO Advanced Materials Co., Ltd.
3056. Factory Price Diode Transistor IGBT Power Module 6MBP30VSC060-50 6MBI100XB-120-50 6MBI150XB-120-50 [Jun 02, 2026]
[Jun 02, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 6-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
3057. Diode Transistor IGBT Power Module6MBI200XBE120-50 6MBI100XXA120-50 6MBI150XXA120-50 [May 27, 2026]
[May 27, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper 6-Pack is a ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
3058. Original Supply 100% New 28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip IC [May 09, 2026]
[May 09, 2026] Product Description Product Description Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide ...
3059. Diode Transistor IGBT Power Module FUJI IGBT 1MBI300HH-120L-50 1MBI400HH-120L-50 1MBI50U4F-120L-50 ... [May 26, 2026]
[May 26, 2026] Product Description FUJI IGBT modules The ordinary IGBT modules produced by FUJI Fuji Company in Japan include the following four types: 1-pack (one unit); 2-pack (two units); 6-pack (six units); Chopper Feel free to ...
Company: Jiangsu Core Drill Age Electronic Technology Co., Ltd
3060. Microprocessor Transistor White Tent Luxury Marquee Wedding Tents [Jan 15, 2026]
[Jan 15, 2026] Accessories of our tents · Covers: colourful cover, transparent cover, inflatable roof cover · Windows: dome or square clear PVC windows, mesh window, glass window for glass ...
