Jiangsu Profile
Product List
13306. Versatile Horizontal Machining Center Capable of Handling Various Complex Geometric Shape CNC ... 
[Jun 24, 2025]
[Jun 24, 2025] Versatile Horizontal Machining Center Capable of Handling Various Complex Geometric Shapes PICTURE FEATURE FEATURE 1. It adopts the internationally popular inverted T-shaped moving column overall bed ...
13307. Goodeng GSE4000-LS Electrical Trenchless Hydraulic Mobile Drilling Riq [Jun 23, 2025]
[Jun 23, 2025] Product Parameters Metric Unit Imperial Unit Rig Weight 42000/49000 kg 92594/107577 lbs Rig Dimension (LxWxH) 14900*18850*3050mm 489.4*743.7*119.7 in E-Control room weight 5200 kg 67 × 8.2 ...
Company: Jiangsu Goodeng Heavy Machinery Technology Co., Ltd
13308. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88e [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13309. 140A 85V N-Channel Enhancement Mode Power Mosfet Dhs043n85e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS043N85 /DHS043N85I/ DHS043N85E /DHS043N85B/ DHS043N85D DHS043N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13310. 120A 98V N-Channel Enhancement Mode Power Mosfet Dhs046n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS04 6N10/DHS04 6N10E /DHS046N10B/DHS046N10D DHS04 6N10F Drian-to-Source Voltage VDSS 98 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13311. 160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...
13312. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
13313. 110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS052N10/DHS052N10I/DHS052N10E/DHS052N10B/DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13314. 205A 85V N-Channel Enhancement Mode Power Mosfet Dhs025n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 205 A (T=100ºC) 143 A Drain ...
13315. 100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS065N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13316. 180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13317. 250A 85V N-Channel Enhancement Mode Power Mosfet Dhs020n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS020N88/DHS020N88I/DHS020N88E DHS020N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Drian Voltage VGSS ±20 V Drain ...
13318. 130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS037N10E DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13319. 110A 85V N-Channel Enhancement Mode Power Mosfet Dhs055n85e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS055N85/ DHS055N85E DHS055N85D/ DHS055N85B Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
13320. 175A 80V N-Channel Enhancement Mode Power Mosfet Dhs035n88e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 80 V ID (T=25ºC) - - 175 A BVGSS ±20 V VTH 2 4 V EAS - - 1024 mJ Ptot - - 1.67 W Rdson - - 3.3 mΩ Features Fast ...
