Jiangsu Profile
Product List
40651. 99A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10P DFN5X6 
[Sep 04, 2026]
[Sep 04, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 99 A (T=100ºC) 70 A Drain ...
40652. 120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...
40653. 64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...
40654. 95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...
40655. 66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
40656. 170A 100V N-Channel Enhancement Mode Power MOSFET DSG030N10N3 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
40657. 80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...
40658. 108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...
40659. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
40660. 112A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...
40661. 96A 100V N-Channel Enhancement Mode Power MOSFET DSP051N10N DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...
40662. 80A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
40663. 50A 100V N-Channel Enhancement Mode Power MOSFET DSD190N10L3 TO-252 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
40664. 105A 68V N-Channel Enhancement Mode Power MOSFET DHS055N07 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...
40665. 50A 100V N-Channel Enhancement Mode Power MOSFET DSB190N10L3 TO-251 [Aug 09, 2026]
[Aug 09, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
