Made-in-china.com

Made-in-Jiangsu.com

Home » Featured Products »

Synchronous Motor

» Jiangsu Product List

Product List

CE Proved High Efficient Plastic 200L 300L Medical Bottle Blow Molding Machine
Contact Now

37486.

CE Proved High Efficient Plastic 200L 300L Medical Bottle Blow Molding Machine Open Details in New Window [Aug 24, 2023]

Company Profile Product Description Die head: Center-feed die head Extrusion system: Adopt world-famous brand automatic temperature controlling device. Drive the screw with electromagnetism motor reducer to ...

Company: Zhangjiagang Apollo Machinery Co., Ltd.

Large Space Comfortable Customization 1600kg 21 Preson 2.5m/S Passenger Elevator
Contact Now

37487.

Large Space Comfortable Customization 1600kg 21 Preson 2.5m/S Passenger Elevator Open Details in New Window [Apr 03, 2023]

Elevator Name:Large Space Comfortable Customization 1600kg 21 Preson 2.5m/s Passenger Elevator MODEL: Passenger Elevator Ceiling: Hairline stainless steel, white acrylic+LED Cabin panel: Hairline stainless ...

Company: Joylive Elevator Co., Ltd

112A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85P DFN5X6
Contact Now

37488.

112A 85V N-Channel Enhancement Mode Power MOSFET DHS043N85P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 112 A (T=100ºC) 78 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263
Contact Now

37489.

170A 100V N-Channel Enhancement Mode Power MOSFET DSE028N10N3 TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6
Contact Now

37490.

66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252
Contact Now

37491.

100A 100V N-Channel Enhancement Mode Power MOSFET DSD065N10L3A TO-252 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 100V N-Channel Enhancement Mode Power MOSFET DSP051N10N DFN5X6
Contact Now

37492.

96A 100V N-Channel Enhancement Mode Power MOSFET DSP051N10N DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6
Contact Now

37493.

108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 Open Details in New Window [Jul 21, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6
Contact Now

37494.

170A 85V N-Channel Enhancement Mode Power MOSFET DSP032N08NA DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263
Contact Now

37495.

115A 150V N-Channel Enhancement Mode Power MOSFET DSE090N15N3A TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6
Contact Now

37496.

80A 60V N-Channel Enhancement Mode Power MOSFET DHS065N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E
Contact Now

37497.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88E Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6
Contact Now

37498.

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6
Contact Now

37499.

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263
Contact Now

37500.

200A 40V N-Channel Enhancement Mode Power MOSFET DSE012N04NA TO-263 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd