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Heavy Duty Manual Press Brake 150 Ton for Thick Plate Bending Industrial Use
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28726.

Heavy Duty Manual Press Brake 150 Ton for Thick Plate Bending Industrial Use Open Details in New Window [Jun 28, 2025]

Product Introduction Heavy Duty Manual Press Brake 150 Ton 4m for Thick Plate Bending - Industrial Use · ePrAX control is a newly developed electro-hydraulic control scheme, which combines the advantages of two driving ...

Company: Nanjing Rongwin Machinery Technology Co., Ltd.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b
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28727.

120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Burner Gas Train Intelligent Adjustable Electric Welding Ball Valve Actuator
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28728.

Burner Gas Train Intelligent Adjustable Electric Welding Ball Valve Actuator Open Details in New Window [Jun 25, 2025]

Actuator Torque 3N.M Electricity frequency 50/60 Hz ±6% Voltage 230V AC +10%/-15% Moving speed 30S/90° Power consumpation 5VA Moving angle 0--130° Motor AC synchronous IP IP40 Working ...

Company: J. Parker Combustion Equipment(Jiangsu)Co., Ltd.

120A 80V N-Channel Enhancement Mode Power Mosfet DSG047n08n3 to-220c
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28729.

120A 80V N-Channel Enhancement Mode Power Mosfet DSG047n08n3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c
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28730.

174A 85V N-Channel Enhancement Mode Power Mosfet Dhs030n88 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10 to-220c
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28731.

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c
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28732.

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f
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28733.

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c
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28734.

160A 120V N-Channel Enhancement Mode Power Mosfet Dhs044n12 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 114 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b
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28735.

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b
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28736.

110A 100V N-Channel Enhancement Mode Power Mosfet Dhs052n10d to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04 to-220c
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28737.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c
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28738.

180A 60V N-Channel Enhancement Mode Power Mosfet Dhs015n06 to-220c Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 V ID (T=25ºC) - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 2116 mJ Ptot - - 227 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f
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28739.

105A 85V N-Channel Enhancement Mode Power Mosfet Dhs056n85f to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b
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28740.

180A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04D to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHS021N04/DHS021N04E/DHS021N04B/DHS021N04D DHS021 N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd