Jiangsu Profile
Product List
14251. 31A 600V N-Channel Super Junction Power MOSFET DJC099N60F TO-247 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30.7 A (T=100ºC) 19.4 A Drain ...
14252. 180A 135V N-Channel Enhancement Mode Power MOSFET DSG052N14N TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 180 (Tc=100ºC) 127 A Drain ...
14253. 10A 400V N-Channel Enhancement Mode Power MOSFET F740 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
14254. 12A 650V N-Channel Enhancement Mode Power MOSFET F12N65 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
14255. 10A 500V N-Channel Enhancement Mode Power MOSFET F10N50 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) (Tc=25ºC) 10 (Tc=100ºC) 6.3 A Drain ...
14256. 4A 600V N-Channel Enhancement Mode Power MOSFET D4N60 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
14257. 110A 200V N-Channel Enhancement Mode Power MOSFET DSG108N20NA TO-220C [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 110 A (Tc=100ºC) 78 A Drain ...
14258. 8A 500V N-Channel Enhancement Mode Power MOSFET 840 TO-220 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
14259. 4A 800V N-Channel Enhancement Mode Power MOSFET F4N80 TO-220F [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 4N80/I4N80/E4N80 F4N80 Drian-Source Voltage VDSS 800 V Gate-to-Source Voltage VGSS ±30 V Drain ...
14260. 50A 120V N-Channel Enhancement Mode Power MOSFET DH150N12D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 50 (Tc=100ºC) 35 A Drain ...
14261. 4A 650V N-Channel Enhancement Mode Power MOSFET B4N65 TO-251 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 4N65/I4N65/E4N65/B4N65/D4N65 F4N65 Drian-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
14262. 5A 500V N-Channel Enhancement Mode Power MOSFET B5N50 TO-251B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
14263. 35A 100V P-Channel Enhancement Mode Power MOSFET DH100P30D TO-252B [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -35 A (T=100ºC) -22 A Drain ...
14264. 20kVA 30kVA High-Efficiency Phase Frequency Converter for Industrial Machinery [Jul 17, 2026]
[Jul 17, 2026] Static Frequency Converters (SFC) Grid systems around the world don't all operate at the same frequency. Whilst the majority of countries use a 50 Hz grid, around 25 percent of nations employ a 60 Hz system. The ...
Company: Suzhou Lingfran Electric Co., Ltd
14265. 100kVA Solid-State Phase Frequency Converter for Heavy Machinery [Jul 16, 2026]
[Jul 16, 2026] Static Frequency Converters (SFC) Grid systems around the world don't all operate at the same frequency. Whilst the majority of countries use a 50 Hz grid, around 25 percent of nations employ a 60 Hz system. The ...
Company: Suzhou Lingfran Electric Co., Ltd
