Jiangsu Profile
Product List
62401. Customized DLC Coated Optical Flat Infrared Silicon IR Window Optical Silicon Window 
[May 18, 2026]
[May 18, 2026]
Company: Band Optics Technology
62402. Zg 5n60 Mosfet 600V 2.8A To220f 5n60 [Dec 24, 2025]
[Dec 24, 2025] ZG5N60 is an N-channel enhancement mode MOSFET, which is produced usingZhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve ...
62403. Sr5100 100V Schottky Diode Rectifier Schottky Diode [Jan 11, 2025]
[Jan 11, 2025] TYPE NUMBER SR52Q SR530 SRMO SR550 SR&&0 SR580 SR5100 UNITS Maximum Recuifrsnl Peak Reverse Voltage 20 30 40 so 60 @0 100 V Maximum RMS Voltage 14 21 28 35 42 56 70 V Maximum DC ...
62404. 1n4007 SMD Diode A7 1A 1000V SOD-123f 1206 Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] Product Information Symbols 1A1 1A2 1A3 1A4 1A5 1A6 1A7 Units Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 Volts Maximum RMS ...
62405. Schottky Barrier Rectifier Diode Sr260 with Do-41 Package [Jan 11, 2025]
[Jan 11, 2025] TYPE NUMBER SR52Q SR530 SRMO SR550 SR&&0 SR580 SR5100 UNITS Maximum Recuifrsnl Peak Reverse Voltage 20 30 40 so 60 @0 100 V Maximum RMS Voltage 14 21 28 35 42 56 70 V Maximum DC ...
62406. Schottky Barrier Rectifier Diode Sr2100 with Do-15 Package [Jan 11, 2025]
[Jan 11, 2025] TYPE NUMBER SR52Q SR530 SRMO SR550 SR&&0 SR580 SR5100 UNITS Maximum Recuifrsnl Peak Reverse Voltage 20 30 40 so 60 @0 100 V Maximum RMS Voltage 14 21 28 35 42 56 70 V Maximum DC ...
62407. Sr280 80V 2A with Do-41 Package Mount Schottky Barrier Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] TYPE NUMBER SR52Q SR530 SRMO SR550 SR&&0 SR580 SR5100 UNITS Maximum Recuifrsnl Peak Reverse Voltage 20 30 40 so 60 @0 100 V Maximum RMS Voltage 14 21 28 35 42 56 70 V Maximum DC ...
62408. with Do-15 Package Mount Schottky Barrier Rectifier Diode Sr220 2A/20V [Jan 11, 2025]
[Jan 11, 2025] TYPE NUMBER SR52Q SR530 SRMO SR550 SR&&0 SR580 SR5100 UNITS Maximum Recuifrsnl Peak Reverse Voltage 20 30 40 so 60 @0 100 V Maximum RMS Voltage 14 21 28 35 42 56 70 V Maximum DC ...
62409. 570W 575W 580W N-Type Half Cell Renewable Energy Photovoltaic Topcon Solar Panel [Oct 20, 2023]
[Oct 20, 2023] Product Description The ultra-thin tunnel layer, N-type poly-Si thin film layer can greatly reduce the loss caused by carrier recombination. Cell conversion efficiency is up to 25%. N type silicon wafer no B-O ...
Company: Elemac Energy Co., Ltd
62410. High Efficiency N-Type Topcon 182mm Cell Half Cut Solar Panels 580W 585W [Aug 17, 2023]
[Aug 17, 2023] Product Description The ultra-thin tunnel layer, N-type poly-Si thin film layer can greatly reduce the loss caused by carrier recombination. Cell conversion efficiency is up to 25%. N type silicon wafer no B-O ...
Company: Elemac Energy Co., Ltd
62411. Gbu 10A 15A 25A 35A Series 50-1000V Bridge Rectifier Diode [Jun 02, 2023]
[Jun 02, 2023] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
62412. Zg High Efficiency Rectifiers UF5407 [May 23, 2023]
[May 23, 2023] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with ...
62413. 0.5A 1000V MB10s Bridge Rectifiers [May 19, 2023]
[May 19, 2023] Symbols MB2S MB4S MB6S MB8S MB10S Units Maximum repetitive peak reverse voltage VRMM 200 400 600 800 1000 Volts Maximum RMS voltage V RMS 140 280 420 560 700 Volts Maximum DC blocking ...
62414. Rectifier Bridge Gbj6005 Gbj610 Gbj608 Gbj606 [Apr 21, 2023]
[Apr 21, 2023] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
62415. New Technology Mono Panel 570W 580W Topcon Solar Module [Apr 11, 2023]
[Apr 11, 2023] Product Description The ultra-thin tunnel layer, N-type poly-Si thin film layer can greatly reduce the loss caused by carrier recombination. Cell conversion efficiency is up to 25%. N type silicon wafer no B-O ...
Company: Elemac Energy Co., Ltd
