Jiangsu Profile
Product List
18901. 20A 1200V SiC Schottky Barrier Diode DCCT20D120G4 TO-247 
[Jul 21, 2026]
[Jul 21, 2026] 20A 1200V SiC Schottky Barrier Diode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18902. 15A 600V Fast Recovery Diode MURE1560 TO-263 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18903. 10A 400V Fast Recovery Diode MURF1040CT TO-220F [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18904. 60A 300V Fast Recovery Diode MUR6030NCS [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18905. 15A 1200V Fast Recovery Diode MUR15FU120 TO-220C [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18906. 60A 300V Fast Recovery Diode MUR6030BCT TO-247 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18907. 5A 1200V SiC Schottky Barrier Diode DCGT05D120G3 TO-220 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18908. 10A 1200V SiC Schottky Barrier Diode DCGT10D120G4 TO-220 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18909. 6A 650V SiC Schottky Barrier Diode DCGT06D65G4 TO-220 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18910. 75A 650V Silicon Controlled Rectifier THYRISTOR DISCRETEDAGC75H65M TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
18911. 20A 650V SiC Schottky Barrier Diode DCGT20D65G4 TO-220 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18912. 50A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC50F65M2 TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
18913. 10A 650V SiC Schottky Barrier Diode DCGT10D65G4 TO-220 [Jul 21, 2026]
[Jul 21, 2026] 25A 1700V SiC Schottky Barrier Diode 1 Description SiC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18914. 60A 650V Bipolar Transistor DHG60T65D TO-3PN [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current (TJ=100ºC) 60 A Pulsed Collector Current ICM 180 A Diode ...
18915. 70A 650V Insulated Gate Bipolar Transistor IGBT G70N65D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
