Jiangsu Profile
Product List
18376. 10A 100V Schottky Barrier Diode MBR10100CT TO-220M 
[Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
18377. 20A 650V SiC Schottky Barrier Diode DCC20D65G4 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18378. 40A 60V Schottky Barrier Diode MBR40R60CT TO-220C [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
18379. 7A 650V N-Channel Enhancement Mode Power MOSFET D7N65 TO-252 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT 7N65/I7N65/E7N65/B7N65/D7N65 F7N65 Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
18380. 30A 45V Schottky Barrier Diode MBR3045CT TO-263 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
18381. 16A 100V Schottky Barrier Diode MBR16100CT TO-220 [Jul 21, 2026]
[Jul 21, 2026] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...
18382. 80A 400V Fast Recovery Diode MUR80FU40DCT TO-3P [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18383. 15A 600V Fast Recovery Diode MUR1560 TO-220 [Jul 21, 2026]
[Jul 21, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
18384. 50A 650V Trench FS IGBT DHG50T65LBBW TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
18385. 20A 200V Schottky Barrier Diode MBRF20200CT TO-220F [Jul 21, 2026]
[Jul 21, 2026] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
18386. 60A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DHG60N65D [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...
18387. 40A 1200V Automotive Grade Power MOSFET G40N120D TO-247 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...
18388. 20A 100V Schottky Barrier Diode MBR20100CS [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current ...
18389. 20A 650V SiC Schottky Barrier Diode DCCT20D65G4 TO-247 [Jul 21, 2026]
[Jul 21, 2026] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
18390. 85A 60V P-Channel Enhancement Mode Power MOSFET DTD125P06LA TO-252 [Jul 21, 2026]
[Jul 21, 2026] Features High density cell design for ultra low Rdson 175°C operating temperature Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for ...
