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7A 600V N-Channel Enhancement Mode Power MOSFET D7N60 TO-252
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17566.

7A 600V N-Channel Enhancement Mode Power MOSFET D7N60 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8V Three-Terminal Positive Voltage Regulator IC L7808CV TO-220
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17567.

8V Three-Terminal Positive Voltage Regulator IC L7808CV TO-220 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode MUR6040DCT TO-3P
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17568.

60A 400V Fast Recovery Diode MUR6040DCT TO-3P Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 400V Fast Recovery Diode MUR840 TO-220
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17569.

8A 400V Fast Recovery Diode MUR840 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247
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17570.

30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C
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17571.

30A 60V Schottky Barrier Diode MBR30R60CTS TO-220C Open Details in New Window [Jul 21, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MURF1040 TO-220F
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17572.

10A 400V Fast Recovery Diode MURF1040 TO-220F Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 400V Fast Recovery Diode MUR2040 TO-220
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17573.

20A 400V Fast Recovery Diode MUR2040 TO-220 Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode HMBRD20R60 TO-252
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17574.

20A 60V Schottky Barrier Diode HMBRD20R60 TO-252 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 400V Fast Recovery Diode MUR20FU40CT TO-220C
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17575.

20A 400V Fast Recovery Diode MUR20FU40CT TO-220C Open Details in New Window [Jul 21, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247
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17576.

20A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGC20F65M2 TO-247 Open Details in New Window [Jul 21, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

3A 500V Intelligent Power Module DPQB03HB50MF ESOP-9
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17577.

3A 500V Intelligent Power Module DPQB03HB50MF ESOP-9 Open Details in New Window [Jul 21, 2026]

Drain-Source Voltage 500V Continuous Drain Current TC = 25(Silicon limit) 3A Power Dissipation (TC = 25,Each MOSFET) 24.5W Operating Junction Temperature -40~150 Transparency here reduces post-purchase ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Germany Standard Electric Solar Panel Generation UPS System
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17578.

Germany Standard Electric Solar Panel Generation UPS System Open Details in New Window [Jun 30, 2026]

***** Germany Standard electric solar panel generation ups system ***** ♦ Founded in 1994 , 300MW solar panel production capacity ,solar panel power range 3watt to 360watt for both polycrystalline and ...

Company: Yangtze Solar Power Co., Ltd.

Yangtze Solar Power 330W Half Cell Perc Monocrystalline Solar Panel 340W 350W 360W
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17579.

Yangtze Solar Power 330W Half Cell Perc Monocrystalline Solar Panel 340W 350W 360W Open Details in New Window [Jun 30, 2026]

Model YS330M-72 YS340M-72 YS350M-72 YS360M-72 Rated Maximum Power at STC 330W 340W 350W 360W Maximum Power Voltage (Vmp) 34.13V 34.63V 35.13V 35.63V Maximum Power Current ...

Company: Yangtze Solar Power Co., Ltd.

Yangtze Customizable Monocrystalline Half Cell 360W Solar Panel for Solar System Power Station
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17580.

Yangtze Customizable Monocrystalline Half Cell 360W Solar Panel for Solar System Power Station Open Details in New Window [Jun 30, 2026]

Model YS330M-72 YS340M-72 YS350M-72 YS360M-72 Rated Maximum Power at STC 330W 340W 350W 360W Maximum Power Voltage (Vmp) 34.13V 34.63V 35.13V 35.63V Maximum Power Current ...

Company: Yangtze Solar Power Co., Ltd.