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8V Three-Terminal Positive Voltage Regulator IC L7808CV TO-220
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16786.

8V Three-Terminal Positive Voltage Regulator IC L7808CV TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 400V Fast Recovery Diode MUR3040CT TO-263
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16787.

30A 400V Fast Recovery Diode MUR3040CT TO-263 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 200V Fast Recovery Diode MUR5020DCT TO-3P
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16788.

50A 200V Fast Recovery Diode MUR5020DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9V Three-Terminal Positive Voltage Regulator IC L7809CV TO-220
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16789.

9V Three-Terminal Positive Voltage Regulator IC L7809CV TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

5V Three-Terminal Positive Voltage Regulator IC L7805CV TO-220
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16790.

5V Three-Terminal Positive Voltage Regulator IC L7805CV TO-220 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=5V-18V VI 35 V VO=24V 40 Output Current IO 1.5 V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 400V Fast Recovery Diode MUR6060DCT TO-3P
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16791.

60A 400V Fast Recovery Diode MUR6060DCT TO-3P Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 400V Fast Recovery Diode MUR1040CT TO-220
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16792.

10A 400V Fast Recovery Diode MUR1040CT TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode MBR30R45CTS TO-220C
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16793.

30A 45V Schottky Barrier Diode MBR30R45CTS TO-220C Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode MBR10R100CT TO-220
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16794.

10A 100V Schottky Barrier Diode MBR10R100CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7A 600V N-Channel Enhancement Mode Power MOSFET D7N60 TO-252
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16795.

7A 600V N-Channel Enhancement Mode Power MOSFET D7N60 TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 120V Insulated Gate Bipolar Transistor IGBT G30N120D TO-247
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16796.

30A 120V Insulated Gate Bipolar Transistor IGBT G30N120D TO-247 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode MBR10R150CT TO-252
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16797.

10A 150V Schottky Barrier Diode MBR10R150CT TO-252 Open Details in New Window [Aug 09, 2026]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 60V Schottky Barrier Diode MBR2060CT TO-220
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16798.

20A 60V Schottky Barrier Diode MBR2060CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 400V Fast Recovery Diode MUR840 TO-220
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16799.

8A 400V Fast Recovery Diode MUR840 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 200V Schottky Barrier Diode MBR20200CT TO-220
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16800.

20A 200V Schottky Barrier Diode MBR20200CT TO-220 Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd