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4 Inch Sic Wafer Substrate 4h-N Type

11941.

4 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

Gold Planted ZP10500A High Current Welding Machine Diode Replace ABB 5SDD0105Z0200, Welding Diodes

11942.

Gold Planted ZP10500A High Current Welding Machine Diode Replace ABB 5SDD0105Z0200, Welding Diodes Open Details in New Window [Aug 23, 2024]

ZP7100A-200V, ZP7100A-400V, ZP9200A-200V, ZP9200A-400V, ZP10500A-200V, ZP10500-400V, ZP12000A-200V, ZP12000A-400V, ZP13500A-200V, ZP13500A-400V, ZP16000A-200V, ZP18000A-200V Y5SDD71X0200, Y5SDD71X0400, Y5SDD71B0200, ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

Peek Wafer Chuck for Electronic Semiconductor Industry

11943.

Peek Wafer Chuck for Electronic Semiconductor Industry Open Details in New Window [Oct 25, 2025]

Product Specification Product Name PEEK Vacuum Suction Pen Application Electronics Semiconductor Industry Material PEEK5600CF30 Color Black Manufacturing technique Injection, Machining ...

Company: Jiangsu Junhua Hpp Co., Ltd.

4 Inch GaN on Silicon Epitaxial Wafer

11944.

4 Inch GaN on Silicon Epitaxial Wafer Open Details in New Window [Nov 05, 2024]

GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)

11945.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

Disc Type Fast Switching Thyristors, Inverter Thyristor, Kk SCR Thyristor

11946.

Disc Type Fast Switching Thyristors, Inverter Thyristor, Kk SCR Thyristor Open Details in New Window [Aug 23, 2024]

***Our main business*** 1)thyristor and diode chips 2)thyristor: Phase control thyristor(kp), fast switching thyristor(kk), Bi-directional Triode Thyristor(TRIAC). 3)diode: Rectifier diode(zp), fast recovery ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

Peek Top Pin for Electronic Semiconductors

11947.

Peek Top Pin for Electronic Semiconductors Open Details in New Window [Oct 25, 2025]

PEEK, PI has excellent electrical properties make it an excellent electrical insulator, may be in a very wide temperature, pressure and frequency fluctuation range, long-term stability. The ultra-high temperature ...

Company: Jiangsu Junhua Hpp Co., Ltd.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ...

11948.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate

11949.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped

11950.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped Open Details in New Window [Nov 05, 2024]

GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

Peek Suction Pen, Peek Suction Tip

11951.

Peek Suction Pen, Peek Suction Tip Open Details in New Window [Oct 25, 2025]

Product Specification Product Name PEEK Vacuum Suction Pen Application Electronics Semiconductor Industry Material PEEK5600CF30 Color Black Manufacturing technique Injection, Machining ...

Company: Jiangsu Junhua Hpp Co., Ltd.

Disc Type SCR High Voltage Phase Control Thyristors, Power Semiconductor Thyristor

11952.

Disc Type SCR High Voltage Phase Control Thyristors, Power Semiconductor Thyristor Open Details in New Window [Aug 23, 2024]

***Our main business*** 1)thyristor and diode chips 2)thyristor: Phase control thyristor(kp), fast switching thyristor(kk), Bi-directional Triode Thyristor(TRIAC). 3)diode: Rectifier diode(zp), fast recovery ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

High Temperature Peek Parts for Electronic Semiconductors

11953.

High Temperature Peek Parts for Electronic Semiconductors Open Details in New Window [Aug 21, 2024]

PEEK, PI has excellent electrical properties make it an excellent electrical insulator, may be in a very wide temperature, pressure and frequency fluctuation range, long-term stability. The ultra-high temperature ...

Company: Jiangsu Junhua Hpp Co., Ltd.

Midas-T-Np1, Honeywell

11954.

Midas-T-Np1, Honeywell Open Details in New Window [Feb 27, 2026]

MOOG AC6438-106 FAIRCHILD 10223 ENTEGRIS SVEG01P01 ENTEGRIS WGMXMPRR2 Entegris WG3D40DR2 ENTEGRIS WGMXMPRR4 Honeywell MIDAS-E-XHF Honeywell MIDAS-E-XHF HONEYWELL MIDAS-E-XCF HONEYWELL MIDAS-E-XCF ASIANTOOL ...

Company: Yuan Wei International Trade Wuxi Co. Ltd

6 Inch Sapphire Substrate

11955.

6 Inch Sapphire Substrate Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.