Jiangsu Profile
Product List
11221. Mcc501-16io1 SCR Module 
[Jun 23, 2022]
[Jun 23, 2022] Acting power semiconductor products and supporting devices, IGBT and supporting drive online suppliers. With many years of experience, unremitting pioneering spirit and good business reputation, the company has ...
11222. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ... [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
11223. 4 Inch Sic Crystal Manufacturer Supply Semi-Insulaing Sic Ingot [May 20, 2025]
[May 20, 2025] 4 inch SiC Crystal Manufacturer supply semi-insulaing SiC ingot SiC crystals manufacturers and suppliers offer 4 inch semi-insulating SiC ingots with competitive price at the market. We also supply 6 inch SiC boule ...
Company: Homray Material Technology
11224. 2 Inch Free Standing GaN Wafer Manufacturer Si Doped [May 20, 2025]
[May 20, 2025] 2 inch free standing GaN wafer manufacturer Si doped GaN substrate wafer supplier and manufacturer HMT usually supply un-doped free-standing GaN subsrate wafer both for 2 inch and 4inch. Double side polished and ...
Company: Homray Material Technology
11225. 4 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
11226. Raw-Cut Sic Wafer Manufacturer with 600um 4h-N Substrate Thickness [May 20, 2025]
[May 20, 2025] Raw-Cut SiC wafer manufacturer with 600um 4H-N substrate thickness Homray Material Technology offers 4H un-polished SiC wafers in different quality grades for researcher and industry manufacturers.We can supply 4 ...
Company: Homray Material Technology
11227. 4 Inch GaN Substrate Wafer Manufacturer Un-Doped [May 20, 2025]
[May 20, 2025] 4 inch GaN Substrate wafer Manufacturer un-doped 100mm (4 inch) GaN substrate wafer in stock from GaN wafer manufacturer and supplier of HMT. we offer both un-doped N type and si-doped N type GaN wafer. The bottom ...
Company: Homray Material Technology
11228. 4 Inch Gallium Nitride N Type GaN Substrate Manufacturer Ssp [May 20, 2025]
[May 20, 2025] 4 inch Gallium Nitride N type GaN Substrate Manufacturer SSP HMT is a leading manufacturer and supplier of GaN wafer, we can offer single side polished 4 inch sapphire GaN wafer with favourable price at the ...
Company: Homray Material Technology
11229. 4 Inch GaN on Silicon Epitaxial Wafer [Nov 05, 2024]
[Nov 05, 2024] GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
11230. 4inch Sapphire GaN Templates Supplier Compound GaN Wafer Manufacturer [Jul 24, 2024]
[Jul 24, 2024] 4inch Sapphire GaN Templates Supplier Compound GaN Wafer Manufacturer Homray Material Technology has established the manufacturing technology for free-standing Gallium Nitride wafer GaN substrate which is for UHB-LED ...
Company: Homray Material Technology
11231. 4 Inch Unpolished Sic Wafer Supplier No Lapping 900um Thickness [May 20, 2025]
[May 20, 2025] 4 inch Unpolished SiC Wafer Supplier no lapping 900um Thickness SiC slicing wafer manufacturer and supplier HMT offer 4 inch unpolished SiC wafer which for SiC lapping and polishing machine testing application. No ...
Company: Homray Material Technology
11232. 4 Inch Si Type Sic Ingot Manufacturer Hpsi Sic Boule [May 20, 2025]
[May 20, 2025] 4 inch SI type SiC ingot manufacturer HPSI SiC Boule HMT is a trusted manufacturer and supplier of SiC Boule, we can supply 4H-N or 4H-SI type SiC crystal boules. 4 inch and 6 inch SiC ingot are available in HMT. In ...
Company: Homray Material Technology
11233. Dummy Sic Ingots Manufacturer for Laser Machine Testing [May 20, 2025]
[May 20, 2025] Dummy SiC ingots manufacturer for laser machine testing A reliable SiC ingot and As cut SiC wafer manufacturer and supplier you can trust in China! We offer both SiC ingots,SiC as cut wafer and SiC substrate wafer ...
Company: Homray Material Technology
11234. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
11235. Hall-Effect Linar Integrated Circuits (OH49E) [Aug 20, 2024]
[Aug 20, 2024] OH49E Series LINEAR HALL-EFFECT IC Order information Type OH49E-S Operating Temperature -20~100 degree Package SOT23 3000PCS/reel Type OH49E -20~100degree Package TO-92S 1000PCS/bag General Description The ...
Company: Nanjing Ouzhuo Technology Co., Ltd.
