Jiangsu Profile

Product List
10996. Zp900 2000-2600V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
10997. Zp800 2600-3400V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
10998. Zp600 3600-4500V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
10999. N5.0 4 Inch Power Transistor Chips/Wafer
[Aug 20, 2024]

Die Size 5000μ m×5000μ m Size of Bonding Pad Base 700μ m×970μ m Emitter 710μ m×1500μ m Thickness 270±20μm Scribe Width 170μm Metallization Front: Al ...
11000. Kp Series Kp500 Dk42 High Power SCR Thyristor Wafer/Die
[Aug 20, 2024]

Item KP500A Limited supply 1000 wafers Package Bare die Current 500A Voltage 1600V 1800V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which ...
11001. P1.15 5 Inch Power Transistor Chips/Wafer P1.15
[Aug 20, 2024]

Die Size 1.13mm×1.13mm BVCEO -50/-100/-150V BVCBO -70/-120/-170V BVEBO -6V IC -3/-1.5/-1A hFE 100~400 VCE(sat) -0.5V fT 50MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint ...
11002. 5551 5-Inch Small-Signal Transistor Chips/Wafer
[Aug 20, 2024]

Die Size 0.44mm×0.44mm BVCEO 160V BVCBO 180V BVEBO 5V IC 0.6A hFE 100~300 VCE(sat) -0.5V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
11003. Bat54 5-Inch Small-Signal Schottky Diode Chips/Wafer
[Aug 20, 2024]

Die Size 0.35mm×0.35mm IF 200mA VR 30V VF/VF1 0.23/1V IR 2μA CT 10pF trr 5 ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which ...
11004. 1n4148ss 4-Inch Silver Bump Switching Diode Chips/Wafer
[Aug 20, 2024]

Die Size 0.21mm×0.21mm IF 200mA VR 100V VF/VF1 1/0.7V IR1/IR2 25/100nA CT 3pF trr 4ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
11005. Zp2400 600-1400V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
11006. Zp1800 1400-2000V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
11007. Zp1600 2000-2600V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
11008. Zp1500 2600-3400V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
11009. Zp2000 2000-2600V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
11010. Zp5000 1400-2000V Zp Series Standard Diode SCR Thyristor
[Aug 20, 2024]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital ...
