Jiangsu Profile
Product List
44851. G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger 
[Aug 19, 2022]
[Aug 19, 2022] Product Description G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger Part Number G12P03A VDSS -30V ID -12A RDS 19 mΩ @ vgs=4.5V Vth -1.6V Package DFN3*3 Ciss 1800 pF Crss 216 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44852. P Type Mosfet 2301h -30V -2A Sot-23 Power Transistor Shenzhen Supplier [Aug 19, 2022]
[Aug 19, 2022] P Type Mosfet 2301H -30V -2A SOT-23 Power Transistor Shenzhen Supplier General Description The 2301H uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44853. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Transistor [Aug 19, 2022]
[Aug 19, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44854. Fqp50n06 Alternative Mosfet 50n06 60V 50A Mosfet to-220 Transistor [Aug 19, 2022]
[Aug 19, 2022] FQP50N06 Alternative Mosfet 50N06 60V 50A Mosfet TO-220 Transistor General Description The 50N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44855. Pd Application Mosfet Gt52n10d5 48A 100V Dfn5X6-8 Mosfet [Aug 19, 2022]
[Aug 19, 2022] PD Application MOSFET GT52N10D5 48A 100V DFN5X6-8 Mosfet General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44856. Fdms4d0n12c Substitute Mosfet Gt52n10d5 Dfn5*6 Package 100V 48A for PV Inverter [Aug 19, 2022]
[Aug 19, 2022] FDMS4D0N12C Substitute Mosfet GT52N10D5 DFN5*6 Package 100V 48A for PV Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44857. Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter [Aug 19, 2022]
[Aug 19, 2022] Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44858. Goford G150n03t Mosfet 30V 150A N Channel to-220 Package Mosfet [Aug 19, 2022]
[Aug 19, 2022] GOFORD G150N03T MOSFET 30V 150A N Channel TO-220 Package MOSFET General Description The G150N03T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44859. China Factory Mosfet 120A 40V N Channel to-220 Mosfet for UPS [Aug 19, 2022]
[Aug 19, 2022] China Factory MOSFET 120A 40V N Channel TO-220 MOSFET for UPS General Description The G120N04A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44860. 2301 P Channel Power Mosfets [Aug 19, 2022]
[Aug 19, 2022] Product Description Professional Mosfet 2301 -20V 3A P-Channel Sot-23 Mosfet Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44861. Goford G15n10c 100V 15A to-252 Mosfet Transistor for Remote Control LED Dimmer [Aug 19, 2022]
[Aug 19, 2022] GOFORD G15N10C 100V 15A TO-252 MOSFET Transistor for Remote Control Led Dimmer General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44862. Electronic Components Gt52n10d5 100V 48A Dfn Package Mosfet [Jun 23, 2022]
[Jun 23, 2022] Electronic Components GT52N10D5 100V 48A DFN Package Mosfet General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44863. Discrete Component Si4916dy Equivalent Transistor G16n03s 30V Mosfet [Jun 14, 2022]
[Jun 14, 2022] Discrete Component Si4916DY Equivalent Transistor G16N03S 30V Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44864. Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger [Aug 19, 2022]
[Aug 19, 2022] GOFORD G3401A MOSFET 30V 4.4A SOT-23 P Channel MOSFET for Mobile Charger General Description The G3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44865. New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package [Aug 19, 2022]
[Aug 19, 2022] New Original MOSFET Transistor SMD Package 45P40 40V50A P Channel with TO-252 Package General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
