Jiangsu Profile
Product List
44131. Fast Delivert Factory 20V 8A N Channel Sot-23-3L Mosfet 
[May 27, 2022]
[May 27, 2022] Fast Delivert Factory 20V 8A N Channel SOT-23-3L MOSFET General Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44132. Fdn337n Alternative 3400L 30V 5.6A N Channel Sot-23 Mosfet Transistor [May 27, 2022]
[May 27, 2022] Fdn337n Alternative 3400L 30V 5.6A N Channel Sot-23 Mosfet Transistor General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44133. Goford Mosfet G33n03D3 30V 33A Dfn3X3 N Mosfet for Pd [May 27, 2022]
[May 27, 2022] GOFORD MOSFET G33N03D3 30V 33A DFN3X3 N MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44134. Low Rdson Sgt Mosfet 60V 45A Dfn3*3 Gt45n06 for Fast Charger [May 27, 2022]
[May 27, 2022] Low Rdson SGT MOSFET 60V 45A DFN3*3 GT45N06 for Fast Charger General Description The GT45N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44135. New Original Mosfet G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 27, 2022]
[May 27, 2022] New Original Mosfet G01N20L 200V 2A SOT-23-3L Mosfet for PD General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44136. SMD Transistor Aod4189 Alternative 45p40 -40V -50A to-252 Mosfet [May 27, 2022]
[May 27, 2022] SMD Transistor AOD4189 Alternative 45p40 -40V -50A to-252 Mosfet General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44137. Mosfet Ao3438 Substitute 20V 6A N-Channel Mosfet with Sot-23 Package [May 27, 2022]
[May 27, 2022] MOSFET AO3438 Substitute 20V 6A N-channel Mosfet with SOT-23 Package General Description The 2300F uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and improved ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44138. Factory Direct 100V 45A Dfn Package Mosfet Transistor [May 27, 2022]
[May 27, 2022] Factory Direct 100V 45A DFN Package Mosfet Transistor General Description The GT45N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44139. Fdn337n Substitute Mosfet Transistor 3400L 30V 5.6A N Channel Sot-23 [May 24, 2022]
[May 24, 2022] FDN337N Substitute Mosfet Transistor 3400L 30V 5.6A N CHANNEL SOT-23 General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44140. Electronic Components 3400 40V 50A Sot-23 Power Transistor China Supplier [May 24, 2022]
[May 24, 2022] Electronic Components 3400 40V 50A SOT-23 Power Transistor China Supplier General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44141. Electronic Component Mosfet Transistor G65p06D5 60V Dfn Package Mosfet [May 24, 2022]
[May 24, 2022] Electronic Component Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44142. Goford G16n03s 30V 12A N Channel Mosfet with Sop-8 Package [May 21, 2022]
[May 21, 2022] GOFORD G16N03S 30V 12A N Channel MOSFET with SOP-8 Package General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44143. Factory Directly Mosfet Transistor G65p06D5 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Factory Directly Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44144. Discrete Component G16p03s P Channel 30V 16A Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44145. G01n20L Mosfet 200V 2A Sot-23-3L Package Transistor China Manufacturer [May 21, 2022]
[May 21, 2022] G01N20L MOSFET 200V 2A SOT-23-3L Package Transistor China Manufacturer General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
