Jiangsu Profile
Product List
44011. Active Components N-Channel Mosfet 60V Transistor G110n06 
[Jun 10, 2022]
[Jun 10, 2022] Active Components N-Channel MOSFET 60V Transistor G110N06 General Description The G110N06uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44012. Mosfet Ao4455 Equivalent Transistor G16p03s P Mosfet -30V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Mosfet AO4455 Equivalent Transistor G16P03S P Mosfet -30V SOP-8 General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44013. Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter [Jun 10, 2022]
[Jun 10, 2022] SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44014. Discrete Component Irf7413z Equivalent Transistor G16n03s N Channel 30V 16A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Discrete Component IRF7413Z Equivalent Transistor G16N03S N Channel 30V 16A Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44015. Mosfet Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes [Jun 10, 2022]
[Jun 10, 2022] MOSFET Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44016. Si4931dy Substitute G11s Mosfet Transistor P Channel 12V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Si4931DY Substitute G11S Mosfet Transistor P Channel 12V SOP-8 General Description The G11S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44017. LED Power Supply Application 60n04 40V 60A To252 N Mosfet [Jun 10, 2022]
[Jun 10, 2022] LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44018. Irf640fp Replacement 200V 18A to-220f Mosfet Transistor for UPS [Jun 10, 2022]
[Jun 10, 2022] IRF640FP Replacement 200V 18A TO-220F MOSFET Transistor for UPS General Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44019. ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44020. Discrete Component 2301 P Channel 20V 3A Mosfet for PWM Application [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute G2304 30V 3.6A MOSFET Transistor with SOT-23 Package General Description The 2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44021. Factory Directly N-Channel Dfn Package 60V 95A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Factory Directly N-Channel Dfn Package 60V 95A Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44022. Si6423dq Equivalent Transistor G08p02ts P Mosfet of 20V 8.2A [Jun 10, 2022]
[Jun 10, 2022] Si6423DQ Equivalent Transistor G08P02TS P MOSFET of 20V 8.2A General Description The G08P02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44023. New Original Mosfet of 100V 3A N-Channel Sot-23-3 Package [Jun 10, 2022]
[Jun 10, 2022] New Original Mosfet of 100V 3A N-CHANNEL SOT-23-3 Package General Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44024. Ao3402 Substitute Transistor 2304 30V 3.6A Sot-23 Mosfet [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute Transistor 2304 30V 3.6A SOT-23 MOSFET General Description The G2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44025. Professional IC Mosfet Transistor 03n06 60V 3A with Sot-23-3L Package [Jun 10, 2022]
[Jun 10, 2022] Professional IC Mosfet Transistor 03N06 60V 3A with SOT-23-3L Package General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
