Jiangsu Profile
Product List
43636. 50n06 Irf50n06 60V 50A to-220 IC Transistor Mosfet for Laptop 
[May 27, 2022]
[May 27, 2022] 50N06 IRF50N06 60V 50A TO-220 IC Transistor Mosfet for Laptop General Description The 50N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43637. ISO9001 Approved Ao3402 Equivalent Transistor 30V Sot-23 Package 3400 Mosfet [May 21, 2022]
[May 21, 2022] ISO9001 Approved AO3402 Equivalent Transistor 30V SOT-23 Package 3400 MOSFET General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43638. 48 Mohm 2301 Sot-23 IC Mosfet A1shb Transistor Equivalent Mosfet with RoHS Certificate [Jan 17, 2022]
[Jan 17, 2022] Product Description 48 mohm 2301 ic mosfet A1SHB transistor equivalent with ROHS certificate Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43639. Power Supply Power Silicon with Insulated Gate Trans Mosfet N-CH 60V 80A G80n06 to-220 [Mar 29, 2021]
[Mar 29, 2021] Product Description POWER SUPPLY POWER SILICON WITH INSULATED GATE TRANS MOSFET N-CH 60V 80A G80N06 TO-220 VDSS 60V ID80A Package type TO-220 Part Number G80N06 VDSS 60V ID 80A RDS 9.5mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43640. Transistor Mosfet 6703 20V 3A N+P-Channel Sot-23-6 (TSOP6) (AO6604 MT2701) [Mar 19, 2021]
[Mar 19, 2021] Product Description transistor mosfet 6703 20V 3A N+P-Channel SOT-23-6(TSOP6) (AO6604 MT2701 ) Part Number 6703 VDSS 20/-20V ID 2.9/-3A RDS 30mΩ @ vgs=4.5V Vth 0.85V Package SOT-23-6 Ciss 300 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43641. 20V Sot-23-6 6703 Transistor Fet Fdc6420c MOS (electronic components) [Mar 19, 2021]
[Mar 19, 2021] Product Description 20V SOT-23-6 6703 transistor fet FDC6420C MOS (electronic components) Part Number 6703 VDSS 20/-20V ID 2.9/-3A RDS 30mΩ @ vgs=4.5V Vth 0.85V Package SOT-23-6 Ciss 300 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43642. G7p03D2 -30V -7A Transistor Mosfet for BMS Application [Mar 19, 2021]
[Mar 19, 2021] Product Description G7P03D2 -30V -7A transistor mosfet for BMS application Part Number G7P03D2 VDSS -30V ID -7A RDS 21mΩ @ vgs=4.5V Vth 0.9V Package DFN2*2 Ciss 1900 pF Crss 150 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43643. Siliconix Power Mosfet 40V 60V 100V 120V 150V (D-S) to-251 to-220 to-252 for Rectifyer Circuit [Mar 19, 2021]
[Mar 19, 2021] Siliconix power mosfet 40V 60V 100V 120V 150V(D-S) TO-251 TO-220 TO-252 SOP-8 DFN5*6 DFN3*3 for rectifyer circuit Part Number GT52N10T VDSS 100V ID 80A RDS 7.5mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43644. G05np10s Mosfet 100V 5A Sop-8 N+P Mosfet [Nov 14, 2023]
[Nov 14, 2023] G05NP10S MOSFET 100V 5A SOP-8 N+P MOSFET General Description The G05NP10S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43645. New Product Fast Switching N-Channel Mosfet of Sop-8 Package 60V Parameter [Nov 14, 2023]
[Nov 14, 2023] New Product Fast Switching N-Channel Mosfet of SOP-8 Package 60V Parameter General Description The G10N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43646. Ao6294 Alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application [Nov 13, 2023]
[Nov 13, 2023] AO6294 alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43647. Ipd09n03la Substitute Mosfet 30V 50A N-Channel [Nov 13, 2023]
[Nov 13, 2023] IPD09N03LA Substitute Mosfet 30V 50A N-Channel General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43648. Gt12n06s Mosfet 60V 12A Sop-8 Mosfet for Fast Charger [Nov 13, 2023]
[Nov 13, 2023] GT12N06S MOSFET 60V 12A SOP-8 MOSFET for Fast Charger General Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43649. Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A [Sep 28, 2022]
[Sep 28, 2022] Factory Directly N-Channel Trench Mosfet of Sot-23-3L 100V 3A General Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43650. N Channel Mosfet Ao3402 Replacement 3400 30V 5.8A Sot-23 [Sep 09, 2022]
[Sep 09, 2022] N Channel Mosfet AO3402 Replacement 3400 30V 5.8A SOT-23 General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
