Jiangsu Profile
Product List
28111. Electrical Component 5n20A Mosfet 200V 5A to-252 Packaging 
[Aug 19, 2022]
[Aug 19, 2022] Product Description 5N20A 200V 5A TO-252 packaging Mosfet (electronic components distributor) Part Number 5N20A VDSS 200V ID 5A RDS 0.49-0.58Ω @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28112. 6 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28113. 8 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28114. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ... [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28115. 4 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28116. 4 Inch GaN on Silicon Epitaxial Wafer [Nov 05, 2024]
[Nov 05, 2024] GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
28117. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
28118. 2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
28119. 4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
28120. 2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped [Nov 05, 2024]
[Nov 05, 2024] GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
28121. 6 Inch Sapphire Substrate [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
28122. Daybright All-in-One Ess [Aug 23, 2024]
[Aug 23, 2024] Daybright ALL-IN-ONE ESS integrates energy storage system modules to support off-grid/grid-connected use and cloud monitoring.With the first-class LFP core and self-developed intelligent BMS battery management system, ...
28123. Dg2-VCR Ultra-High Purity Pressure Transmitter for Semiconductor Manufacturing, Ultra-High Purity ... [Jan 15, 2025]
[Jan 15, 2025] 
Product Parameters Model No. DG2-VCR Output Signal Type Direct current Production Process Micro Fusion Material 17-4PH/316L(VIM+VAM)/Hastelloy Thread Type 1/4VCR, Customized Wiring Type 1, Direct outlet 2, ...
Company: Shenzhen Maxonic Automation Control Co., Ltd Senex Branch
28124. Semiconductor SMD Diode Mbr1040CT-Mbr10200CT 200V/10A with to-220ab Package Schottky Barrier ... [Jan 11, 2025]
[Jan 11, 2025] FAQ:1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with prompt ...
28125. dB157s Original Discrete Semiconductor Products Diodes Bridge Rectifiers DBS 1kv 1.5A [Dec 24, 2025]
[Dec 24, 2025] Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency ...
