Jiangsu Profile
Product List
23611. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
23612. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
23613. Jcr0044p (SN) Thyristor Element Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 440μ m×440μ m Size of Bonding Pad Controlling 115μ m×115μ m Cathode: 190×190×3/4µm2 Thickness 220±20μm Known Good Dies 36300 Metallization ...
23614. Jcr0150b 4-Inch SCR Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1500μ m×1500μ m Size of Bonding Pad Controlling 260μ m×260μ m Cathode: 920×920×3/4µm2 Thickness 220±20μm Scribe Width 90μm Metallization ...
23615. P1.8 4-Inch Power Transistor Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1780μ m×1780μ m Size of Bonding Pad Base 495μ m×495μ m Emitter 495μ m×495μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
23616. 13009 4-Inch NPN High-Voltage Switching Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 4.3mm×4.3mm Size of Bonding Pad Base 690*1000μm2 Emitter 825*1200μm2 Thickness 240±10μm Scribe Width 60μm Metallization Front: Al 4.3±0.3μm Front: Al ...
23617. Bc817 High Frequency Small Signal Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.49mm×0.49mm BVCEO 45V IC 500A BVCBO/BVEBO 50V/6V hFE Min.:125 Max:600 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
23618. 882m 5-Inch Medium-Power Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1..08mm×1.08mm BVCEO 30V IC 3A BVCBO/BVEBO 30V/7V hFE Min.:100 Max:400 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
23619. RoHS Compliant P-Channel Mosfet Application 2301 in a Sot-23 Package [Mar 22, 2021]
[Mar 22, 2021] Product Description Rohs Compliant P-Channel MOSFET application 2301 in a SOT-23 package Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23620. DC Motor Control Usage Power Mosfet Reel/Tube Packing [Mar 22, 2021]
[Mar 22, 2021] Product Description DC motor control usage Power Mosfet Reel/Tube Packing Part Number 630A VDSS 200V ID 9A RDS 210 mΩ @ vgs=10V Vth 1.6V Package TO-251 Ciss 509 pF Crss 3.2 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23621. S45p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 14, 2020]
[Dec 14, 2020] Die Size 1.14mm×1.14mm IF 2A VR 40V IR 25μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23622. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 14, 2020]
[Dec 14, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
23623. Monocrystalline Silicon 8 Inch Storage Box [Apr 06, 2023]
[Apr 06, 2023] Description Visual Inspection Criteria Material Storage-Box is made of antistatic PP Scratch less than 3cm Defect Description criteria Broken/Damaged Free of Broken/Damaged Crack No ...
23624. Monocrystalline Silicon Needle [Mar 22, 2023]
[Mar 22, 2023] Description Certificate About Us Suzhou Henglixin New Materials Co., Ltd. is a professional and comprehensive service company for semiconductor wafers and silicon components solutions. we entered the ...
23625. 1n5391 1n5392 1n5393 1n5395 1n5397 1n5398 1n5399 Rectifier Diode Modules [Jan 07, 2022]
[Jan 07, 2022] Quick Details Model Number: SS310(SS32~SS320) Type: Schottky Diode Place of Origin: Guangdong, China Brand Name: LCE Package Type: Surface Mount Max. Forward Voltage: 0.85V Max. Reverse ...
Company: Jiangsu Powerful Semiconductor Technology Co., Ltd.
