Jiangsu Profile
Product List
22996. Jcr0092b 4-Inch SCR Thyristor Chip/Diced Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 0.92mm×0.92mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 0.8A ITSM 8A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22997. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1620μ m×1620μ m Known Good Dies 2800 P(W) 35 I(A) 3.2 BCEO/BCEO/BEBO(V) 220/350/7 hFE 10-40 fT(MHz) 5 Metallization Front: Al Back: Ag Yangzhou Genesis Microelectronics Co., ...
22998. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
22999. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
23000. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
23001. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
23002. Jcr0044p (SN) Thyristor Element Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 440μ m×440μ m Size of Bonding Pad Controlling 115μ m×115μ m Cathode: 190×190×3/4µm2 Thickness 220±20μm Known Good Dies 36300 Metallization ...
23003. Jcr0150b 4-Inch SCR Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1500μ m×1500μ m Size of Bonding Pad Controlling 260μ m×260μ m Cathode: 920×920×3/4µm2 Thickness 220±20μm Scribe Width 90μm Metallization ...
23004. P1.8 4-Inch Power Transistor Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1780μ m×1780μ m Size of Bonding Pad Base 495μ m×495μ m Emitter 495μ m×495μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
23005. 13009 4-Inch NPN High-Voltage Switching Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 4.3mm×4.3mm Size of Bonding Pad Base 690*1000μm2 Emitter 825*1200μm2 Thickness 240±10μm Scribe Width 60μm Metallization Front: Al 4.3±0.3μm Front: Al ...
23006. Bc817 High Frequency Small Signal Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.49mm×0.49mm BVCEO 45V IC 500A BVCBO/BVEBO 50V/6V hFE Min.:125 Max:600 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
23007. 882m 5-Inch Medium-Power Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1..08mm×1.08mm BVCEO 30V IC 3A BVCBO/BVEBO 30V/7V hFE Min.:100 Max:400 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
23008. RoHS Compliant P-Channel Mosfet Application 2301 in a Sot-23 Package [Mar 22, 2021]
[Mar 22, 2021] Product Description Rohs Compliant P-Channel MOSFET application 2301 in a SOT-23 package Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23009. DC Motor Control Usage Power Mosfet Reel/Tube Packing [Mar 22, 2021]
[Mar 22, 2021] Product Description DC motor control usage Power Mosfet Reel/Tube Packing Part Number 630A VDSS 200V ID 9A RDS 210 mΩ @ vgs=10V Vth 1.6V Package TO-251 Ciss 509 pF Crss 3.2 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23010. S45p60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 14, 2020]
[Dec 14, 2020] Die Size 1.14mm×1.14mm IF 2A VR 40V IR 25μA VF 0.53V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
