Jiangsu Profile
Product List
22006. Mosfet Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes 
[Jun 10, 2022]
[Jun 10, 2022] MOSFET Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22007. Si4931dy Substitute G11s Mosfet Transistor P Channel 12V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Si4931DY Substitute G11S Mosfet Transistor P Channel 12V SOP-8 General Description The G11S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22008. LED Power Supply Application 60n04 40V 60A To252 N Mosfet [Jun 10, 2022]
[Jun 10, 2022] LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22009. Irf640fp Replacement 200V 18A to-220f Mosfet Transistor for UPS [Jun 10, 2022]
[Jun 10, 2022] IRF640FP Replacement 200V 18A TO-220F MOSFET Transistor for UPS General Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22010. ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22011. Discrete Component 2301 P Channel 20V 3A Mosfet for PWM Application [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute G2304 30V 3.6A MOSFET Transistor with SOT-23 Package General Description The 2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22012. Factory Directly N-Channel Dfn Package 60V 95A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Factory Directly N-Channel Dfn Package 60V 95A Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22013. Si6423dq Equivalent Transistor G08p02ts P Mosfet of 20V 8.2A [Jun 10, 2022]
[Jun 10, 2022] Si6423DQ Equivalent Transistor G08P02TS P MOSFET of 20V 8.2A General Description The G08P02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22014. New Original Mosfet of 100V 3A N-Channel Sot-23-3 Package [Jun 10, 2022]
[Jun 10, 2022] New Original Mosfet of 100V 3A N-CHANNEL SOT-23-3 Package General Description The G1006LE uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22015. Ao3402 Substitute Transistor 2304 30V 3.6A Sot-23 Mosfet [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute Transistor 2304 30V 3.6A SOT-23 MOSFET General Description The G2304 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22016. Professional IC Mosfet Transistor 03n06 60V 3A with Sot-23-3L Package [Jun 10, 2022]
[Jun 10, 2022] Professional IC Mosfet Transistor 03N06 60V 3A with SOT-23-3L Package General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22017. Fast Delivert Factory 20V 8A N Channel Sot-23-3L Mosfet [May 27, 2022]
[May 27, 2022] Fast Delivert Factory 20V 8A N Channel SOT-23-3L MOSFET General Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22018. Fdn337n Alternative 3400L 30V 5.6A N Channel Sot-23 Mosfet Transistor [May 27, 2022]
[May 27, 2022] Fdn337n Alternative 3400L 30V 5.6A N Channel Sot-23 Mosfet Transistor General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22019. Goford Mosfet G33n03D3 30V 33A Dfn3X3 N Mosfet for Pd [May 27, 2022]
[May 27, 2022] GOFORD MOSFET G33N03D3 30V 33A DFN3X3 N MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22020. Low Rdson Sgt Mosfet 60V 45A Dfn3*3 Gt45n06 for Fast Charger [May 27, 2022]
[May 27, 2022] Low Rdson SGT MOSFET 60V 45A DFN3*3 GT45N06 for Fast Charger General Description The GT45N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
