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High Performance Thyristor Mtc30-160 SCR Module for Industrial Applications
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20356.

High Performance Thyristor Mtc30-160 SCR Module for Industrial Applications Open Details in New Window [Dec 02, 2025]

Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

High Quality SCR Thyristor for Power Control Fast Delivery Energy Saving for Phase Control ...
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20357.

High Quality SCR Thyristor for Power Control Fast Delivery Energy Saving for Phase Control ... Open Details in New Window [Jan 04, 2026]

Product Description Thyristor Module High-Quality Construction: This SCR power control module is designed with high-quality components, ensuring reliable performance and durability in demanding applications, such ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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20358.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b
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20359.

40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c
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20360.

100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4/6/8/12 Inch Silicon Wafer for Mosfet Chips
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20361.

4/6/8/12 Inch Silicon Wafer for Mosfet Chips Open Details in New Window [Jan 03, 2026]

Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...

Company: Wuxi Kingful Corporation., Ltd

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263
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20362.

100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c
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20363.

30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c
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20364.

150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220
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20365.

100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220 Open Details in New Window [Nov 08, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b
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20366.

50A 30V N-Channel Enhancement Mode Power Mosfet DHD50n03 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHD50N03/DHB50N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b
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20367.

50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b
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20368.

90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b
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20369.

90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252
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20370.

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 Open Details in New Window [Nov 08, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd