Jiangsu Profile
Product List
10906. ISO9001 Certificate 40V 12A to-252 Package P Channel Mosfet 
[May 27, 2022]
[May 27, 2022] ISO9001 Certificate 40V 12A TO-252 Package P Channel Mosfet General Description The G12P04K uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10907. CSD17510q5a Alternative 30V 110A N Channel Dfn5X6 Sgt Mosfet for UPS [May 27, 2022]
[May 27, 2022] CSD17510q5a Alternative 30V 110A N Channel Dfn5X6 Sgt Mosfet for UPS General Description The GT130N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10908. Mosfet Manufacturer 60V 40A Dfn5X6 Dual N Mosfet with SGS Certificate [May 27, 2022]
[May 27, 2022] MOSFET Manufacturer 60V 40A DFN5X6 Dual N MOSFET with SGS Certificate General Description The GT090N06D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10909. Goford Mosfet G33n03D3 30V 33A Dfn3X3 N Mosfet for Pd [May 27, 2022]
[May 27, 2022] GOFORD MOSFET G33N03D3 30V 33A DFN3X3 N MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10910. Low Rdson Sgt Mosfet 60V 45A Dfn3*3 Gt45n06 for Fast Charger [May 27, 2022]
[May 27, 2022] Low Rdson SGT MOSFET 60V 45A DFN3*3 GT45N06 for Fast Charger General Description The GT45N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10911. New Original Mosfet G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 27, 2022]
[May 27, 2022] New Original Mosfet G01N20L 200V 2A SOT-23-3L Mosfet for PD General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10912. Factory Directly N-Channel Trench Mosfet of to-220 100V 12A Parameters [May 27, 2022]
[May 27, 2022] Factory Directly Dual N-Channel Trench Mosfet of TO-220 100V 12A Parameters General Description The G12P10T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10913. Factory Directly 60V N+P Channel Sop-8 Mosfet [May 27, 2022]
[May 27, 2022] Factory Directly 60V N+P channel SOP-8 Mosfet General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10914. Mosfet Ao3438 Substitute 20V 6A N-Channel Mosfet with Sot-23 Package [May 27, 2022]
[May 27, 2022] MOSFET AO3438 Substitute 20V 6A N-channel Mosfet with SOT-23 Package General Description The 2300F uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and improved ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10915. Factory Direct 100V 45A Dfn Package Mosfet Transistor [May 27, 2022]
[May 27, 2022] Factory Direct 100V 45A DFN Package Mosfet Transistor General Description The GT45N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10916. G08n06s Mosfet 60V 6A N Channel Sop-8 Mosfet Transistor [May 26, 2022]
[May 26, 2022] G08N06S MOSFET 60V 6A N Channel SOP-8 MOSFET Transistor General Description The G08N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10917. G05np06s2 N and P Channel 60V Sop-8 Mosfet [May 24, 2022]
[May 24, 2022] G05NP06S2 N and P Channel 60V SOP-8 MOSFET General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10918. Goford G16n03s 30V 12A N Channel Mosfet with Sop-8 Package [May 21, 2022]
[May 21, 2022] GOFORD G16N03S 30V 12A N Channel MOSFET with SOP-8 Package General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10919. Discrete Component G16p03s P Channel 30V 16A Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
10920. G01n20L Mosfet 200V 2A Sot-23-3L Package Transistor China Manufacturer [May 21, 2022]
[May 21, 2022] G01N20L MOSFET 200V 2A SOT-23-3L Package Transistor China Manufacturer General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
