Jiangsu Profile
Product List
2791. Electronic Components 60V N and P Channel Mosfet 
[Jun 14, 2022]
[Jun 14, 2022] Electronic Components 60V N and P Channel Mosfet General Description The G06NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2792. Electronic Components G2014 20V 14A SMD Mosfet for Electronic Cigarettes [Jun 14, 2022]
[Jun 14, 2022] Electronic Components G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2793. ISO9001 Approved G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2794. Fdmc4435bz Alternative Mosfet -30V P Channel Mosfet for Pd [May 27, 2022]
[May 27, 2022] FDMC4435BZ Alternative MOSFET -30V P Channel MOSFET for PD General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2795. SGS Certificate 60V 14A Sop-8 N Channel Mosfet [May 24, 2022]
[May 24, 2022] SGS Certificate 60V 14A Sop-8 N Channel Mosfet General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2796. Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet [May 24, 2022]
[May 24, 2022] IRF100B202 Alternative N Channel 100V 75A TO-220 Package Mosfet General Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2797. Factory Directly Transistor N+P Channel 60V 5A Sop-8 Mosfet [May 24, 2022]
[May 24, 2022] Factory Directly Transistor N+P Channel 60V 5A SOP-8 Mosfet General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2798. Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G01N20L 200V 2A SOT-23-3L Mosfet for Pd General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2799. Electric Components Power Transistor Ces2323 Alternative Goford G07p03L -30V -7A Sot-23-3 P CH ... [Apr 23, 2021]
[Apr 23, 2021] Product Description Electric Components Power transistor CES2323 alternative Goford G07P03L -30V -7A SOT-23-3 P CH Mosfet Part Number G07P03L VDSS -30V ID -7A RDS 26mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2800. RoHS Compliant G2014 20V 14A SMD Mosfet for Electronic Cigarettes [Jun 23, 2022]
[Jun 23, 2022] RoHS Compliant G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2801. ISO9001 Fdmc4435bz Equivalent Transistor 30V 16A Dfn3X3 Mosfet for Mobile Charger [Jun 23, 2022]
[Jun 23, 2022] ISO9001 FDMC4435BZ Equivalent Transistor 30V 16A Dfn3X3 Mosfet for Mobile Charger General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2802. New Original Mosfet 150V 60A N Channel to-220 Gt190n15t Mosfet [Jun 10, 2022]
[Jun 10, 2022] New Original Mosfet 150V 60A N Channel TO-220 GT190N15T MOSFET General Description The GT190N15T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2803. 50n06 Irf50n06 60V 50A to-220 IC Transistor Mosfet for Laptop [May 27, 2022]
[May 27, 2022] 50N06 IRF50N06 60V 50A TO-220 IC Transistor Mosfet for Laptop General Description The 50N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2804. Power Supply Power Silicon with Insulated Gate Trans Mosfet N-CH 60V 80A G80n06 to-220 [Mar 29, 2021]
[Mar 29, 2021] Product Description POWER SUPPLY POWER SILICON WITH INSULATED GATE TRANS MOSFET N-CH 60V 80A G80N06 TO-220 VDSS 60V ID80A Package type TO-220 Part Number G80N06 VDSS 60V ID 80A RDS 9.5mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2805. Factory Directly P Channel 30V 7A Dfn Package Mosfet [Nov 14, 2023]
[Nov 14, 2023] Factory Directly P channel 30V 7A DFN Package MOSFET General Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
