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70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6
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183751.

70A 60V N-Channel Enhancement Mode Power MOSFET DATP057N06N DFN5X6 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C
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183752.

120A 85V N-Channel Enhancement Mode Power MOSFET DSG048N08N3 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DSG048N08N3 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 84 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Centrifuge Tube Stainless Steel 304 316 Stainless Steel Forging Tube and Ring
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183753.

Centrifuge Tube Stainless Steel 304 316 Stainless Steel Forging Tube and Ring Open Details in New Window [Aug 12, 2026]

Product Description: Production Facilities Electric-hydraulic hammers with capacity 8 tons,6 tons,3 tons; Feeding Machines with capacity 10 tons, 5 ton Length max. 3500mm. Heat-treatment Furnaces 5 ...

Company: Wuxi Eternal Bliss Alloy Casting & Forging Co., Ltd.

Phd/Pq Locking Coupling Wireline Double Tube Core Barrel
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183754.

Phd/Pq Locking Coupling Wireline Double Tube Core Barrel Open Details in New Window [Aug 10, 2026]

PHD/PQ locking coupling for Wireline double tube core barrel PQ/PHD Barrel Wire-line core drilling tools can lift core from drill rods without picking up coring system. A complete set of ...

Company: Wuxi Geotec Geological Equipment Co., Ltd.

Syria PA-110 Pq Corebarrel Overshot Assembly
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183755.

Syria PA-110 Pq Corebarrel Overshot Assembly Open Details in New Window [Aug 10, 2026]

Syria PA-110 Pq corebarrel Overshot Assembly Wire-line core drilling tools can lift core from drill rods without picking up coring system. A complete set of wire-line drill tools include: Core barrel assembly, ...

Company: Wuxi Geotec Geological Equipment Co., Ltd.

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6
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183756.

64A 60V N-Channel Enhancement Mode Power MOSFET DHS095N06P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 52 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 60V P-Channel Enhancement Mode Power MOSFET DTG050P06LA TO-220C
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183757.

140A 60V P-Channel Enhancement Mode Power MOSFET DTG050P06LA TO-220C Open Details in New Window [Aug 09, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 650V N-Channel Enhancement Mode Power MOSFET F10N65 TO-220F
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183758.

10A 650V N-Channel Enhancement Mode Power MOSFET F10N65 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT F10N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 10 0A (T=100ºC) 6.3 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6
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183759.

70A 60V N-Channel Enhancement Mode Power MOSFET DH066N06P DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH066N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 50 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6
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183760.

95A 100V N-Channel Enhancement Mode Power MOSFET DSP070N10L3A DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 95 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power MOSFET DHF60N06 TO-220F
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183761.

33A 60V N-Channel Enhancement Mode Power MOSFET DHF60N06 TO-220F Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

25A 110V N-Channel Enhancement Mode Power MOSFET DHS250N11D TO-252B
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183762.

25A 110V N-Channel Enhancement Mode Power MOSFET DHS250N11D TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 110 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06D TO-252
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183763.

120A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

240A 100V N-Channel Enhancement Mode Power MOSFET DSG024N10N3 TO-220C
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183764.

240A 100V N-Channel Enhancement Mode Power MOSFET DSG024N10N3 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6
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183765.

66A 40V N-Channel Enhancement Mode Power MOSFET DSP060N04LA DFN5X6 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd