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Product List
8566. High Purity Ammonia 99.999% 5n Gas 
[Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8567. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8568. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8569. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8570. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8571. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8572. Ultra High Purity 99.999% Ammonia Gas for Industrial Use [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Package Specifications: Package Volume Weight Valve connection Cylinder 47L 20KG CGA660,DISS720 Y-CYL 440L 230KG DISS ...
8573. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 < 0.5 0.1 0.01 N2(VOF)/10-6 < 1 - 0.01 CO(VOF)/10-6 ...
8574. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8575. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8576. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
8577. High Gloss Electrostatic Powder Coating for Outdoor Use [Jun 13, 2025]
[Jun 13, 2025] Product Details DESCRIPTION 1.High gloss powder coating is a solvent-free powder-based type of coating used commonly to coat metals for a wide range of applications 2.The resin content of high gloss powder should ...
8578. High Purity 99.999% 5n Hydrobromide [Jun 09, 2025]
[Jun 09, 2025] Product Information Hydrogen bromide is used in combination with hydrogen chloride and chlorine for plasma etching of polysilicon as STI /Silicon fin etch in FinFET or Trigate, silicon gate stack etch, and small ...
8579. Electronic Grade 99.999% 5n Dichlorosilane [Jun 09, 2025]
[Jun 09, 2025] Product Descriptions Dichlorosilane is a silicon precursor for epitaxial silicon, silicon germanium, silicon nitride, silicon oxide, silicon carbide and metal silicide thin films. Details Product ...
8580. Electronic Grade Ethylene Gas 99.999% 5n C2h4 [Jun 06, 2025]
[Jun 06, 2025] Product Description Ethylene is an organic compound which is a colorless flammable gas with a faint sweet and musky odor when pure. It is a hydrocarbon with a formula C2H4. The molecular mass of Ethylene is ...
