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![9-Methyl-9-Azabicyclo[3.3.1]Nonan-3-One CAS No.: 552-70-5 Good Price](http://image.made-in-china.com/3f2j00QzlYtIWsorga/9-Methyl-9-Azabicyclo-3-3-1-Nonan-3-One-CAS-No-552-70-5-Good-Price.jpg)
7351. 9-Methyl-9-Azabicyclo[3.3.1]Nonan-3-One CAS No.: 552-70-5 Good Price 
[Jun 20, 2025]
[Jun 20, 2025] Product Description Product Detail Name: 9-Methyl-9-azabicyclo[3.3.1]nonan-3-one CAS No.: 552-70-5 Molecular Formula: C9H15NO Molecular Weight: 153.22 EINECS: 209-021-1 Composition: Purity≥99% Loss on ...
Company: Puyer Biopharma Ltd.
7352. (+) -Abscisic Acid CAS No.: 21293-29-8 High Quality Good Price [Jun 20, 2025]
[Jun 20, 2025] Product Description Product Detail Name: (+)-Abscisic acid CAS No.: 21293-29-8 Molecular Formula: C15H20O4 Molecular Weight: 264.32 EINECS: 244-319-5 Composition: Purity≥99% Loss on ...
Company: Puyer Biopharma Ltd.
7353. Premium Ral 9005 Sand Texture Outdoor Polyester Powder Coating [Jun 19, 2025]
[Jun 19, 2025] Product Details DESCRIPTION Sand finish powder coating is as a kind of environment-friendly type coating, have solvent-free, lowly pollute, coating process is simple, the coating efficiency advantages of higher. ...
7354. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
7355. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
7356. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
7357. High Purity Ammonia 99.999% 5n Gas [Jun 16, 2025]
[Jun 16, 2025] Ammonia is a nitrogen precursor for silicon nitride and metal nitride thin films. Product Specifications: Ammonia 99.9995% 99.99994% 99.99999% H2(VOF)/10-6 < 0.5 0.1 0.01 O2+Ar(VOF)/10-6 ...
7358. High Purity 99.999% 5n Hydrobromide [Jun 09, 2025]
[Jun 09, 2025] Product Information Hydrogen bromide is used in combination with hydrogen chloride and chlorine for plasma etching of polysilicon as STI /Silicon fin etch in FinFET or Trigate, silicon gate stack etch, and small ...
7359. High Purity 99.999% 5n Hydrobromide [Jun 09, 2025]
[Jun 09, 2025] Product Information Hydrogen bromide is used in combination with hydrogen chloride and chlorine for plasma etching of polysilicon as STI /Silicon fin etch in FinFET or Trigate, silicon gate stack etch, and small ...
7360. High Purity 99.999% 5n Hydrobromide [Jun 09, 2025]
[Jun 09, 2025] Product Information Hydrogen bromide is used in combination with hydrogen chloride and chlorine for plasma etching of polysilicon as STI /Silicon fin etch in FinFET or Trigate, silicon gate stack etch, and small ...
7361. Electronic Grade 99.999% 5n Dichlorosilane [Jun 09, 2025]
[Jun 09, 2025] Product Descriptions Dichlorosilane is a silicon precursor for epitaxial silicon, silicon germanium, silicon nitride, silicon oxide, silicon carbide and metal silicide thin films. Product Details Product ...
7362. Electronic Grade 99.999% 5n Dichlorosilane [Jun 09, 2025]
[Jun 09, 2025] Product Descriptions Dichlorosilane is a silicon precursor for epitaxial silicon, silicon germanium, silicon nitride, silicon oxide, silicon carbide and metal silicide thin films. Product Details Product ...
7363. Electronic Grade 99.999% 5n Dichlorosilane [Jun 09, 2025]
[Jun 09, 2025] Product Descriptions Dichlorosilane is a silicon precursor for epitaxial silicon, silicon germanium, silicon nitride, silicon oxide, silicon carbide and metal silicide thin films. Details Product ...
7364. Electronic Grade 99.999% 5n Dichlorosilane [Jun 09, 2025]
[Jun 09, 2025] Product Descriptions Dichlorosilane is a silicon precursor for epitaxial silicon, silicon germanium, silicon nitride, silicon oxide, silicon carbide and metal silicide thin films. Details Product ...
7365. Electronic Grade 99.999% 5n Dichlorosilane [Jun 09, 2025]
[Jun 09, 2025] Product Descriptions Dichlorosilane is a silicon precursor for epitaxial silicon, silicon germanium, silicon nitride, silicon oxide, silicon carbide and metal silicide thin films. Details Product ...
